Asml Netherlands B.v.

Tokyo Electron Limited

Hermes Microvision Inc.

Ying Luo

Yixiang Wang

Shibing Liu

Jan-Gerard Cornelis Van Der Toorn

Bohang Zhu

Zhonghua Dong

Allard Eelco Kooiker

Jurgen Van Soest

Han Willem Hendrik Severt

Jeroen Gertruda Antonius Huinck

Arno Maria Wellink

Chia-Yao Chen

Wei Liu

Shifang Li

Wei Fang

Sanjay K Yedur

Hanyou Chu

Yu Liu

Juying Dou

Youxian Wen

Ronald Van Der Wilk

Lingling Pu

Qiang Li

Michael Johannes Christiaan Ronde

Michaël Johannes Christiaan Ronde

Ruochong Fei

Long Di

KuoFeng Tseng

Nianpei Deng

Shanhui Cao

Kangsheng Qiu

Yinglong Li

Xuehui Yin

Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 kHz to 50 kHz, and 50 kHz to 200 kHz, respectively.

Systems and methods for focusing charged—particle beams

An electrostatic chuck control system configured to be utilized during an inspection process of a wafer, the electrostatic chuck control system comprising an electrostatic chuck of a stage configured to be undocked during the inspection process, wherein the electrostatic chuck comprises a plurality of components configured to influence an interaction between the wafer and the electrostatic chuck during the inspection process, a first sensor configured to generate measurement data between at least some of the plurality of components and the wafer, and a controller including circuitry configured to receive the measurement data to determine characteristics of the wafer relative to the electrostatic chuck and to generate adjustment data to enable adjusting, while the stage is undocked, at least some of the plurality of components based on the determined characteristics.

Method, apparatus, and system for dynamically controlling an electrostatic chuck during an inspection of wafer

Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

Method, apparatus, and system for wafer grounding

Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.

Object table comprising an electrostatic clamp

Laser sub-divisional error (SDE) effect is compensated by using adaptive tuning. This compensated signal can be applied to position detection of stage in ebeam inspection tool, particularly for continuous moving stage.

Laser SDE effect compensation by adaptive tuning

Transmittance of a photomask is determined using optical metrology. In particular, reflectance of a portion of the photomask is determined by directing an incident beam of light at the portion of the photomask. The reflectance is determined by measuring light diffracted from the portion of the photomask. One or more geometric features of the portion of the photomask are determined using the measured light diffracted from the portion of the photomask. A wave coupling is determined using the determined one or more geometric features of the portion of the photomask. The transmittance of the photomask is determined using the determined wave coupling and the determined reflectance of the portion of the photomask.

Determining transmittance of a photomask using optical metrology

Growing community of inventors

San Jose, CA, United States of America

Ying Luo