Agilent Technologies, Inc.

Nanomix, Inc.

Other

Glo Ab

Hewlett-packard Company

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Fiber IP (singapore) Pte. Ltd

Lumileds Lighting U.s., LLC

Aledia

Ying-Lan Chang

Michael R T Tan

David P Bour

Ashish Tandon

Tetsuya Takeuchi

Michael H Leary

John Loren Passmore

Christian Valcke

Bradley N Johnson

Sergei Skarupo

Jean-Christophe P Gabriel

Craig Bryant

Scott W Corzine

William E Mickelson

Oleksandr Kuzmych

Linda T Romano

Eugene Tu

Sungsoo Yi

Olga Kryliouk

Danielle Russell Chamberlin

Keith Bradley

Patrik Svensson

Danny E Mars

Ray R Radtkey

Kanchan A Joshi

Michael Ragan Krames

Theodore I Kamins

Phillip W Barth

Ivan-Christophe Robin

Robert C Taber

Stephen Andrew Stockman

Alexander Star

Jennifer Lu

Timothy Herbert Joyce

Nicolas J Moll

Russell Dean Dupuis

Christopher P Kocot

Thomas Edward Kopley

Dan-Hui Dorothy Yang

Sylvia Scaringella

Jean-Christophe Gabriel

Abdelhay Aboulaich

Mikhail Briman

Yoon-Kyu Song

Eugene I Chen

Patrick N Grillot

Andy Luan

Sungwon David Roh

Willem-Jan Ouborg

Jae Hyun Ryou

Min Soo Noh

Shirpal C Gandhi

Kastooriranganathan Ramakrishnan

An emitting device comprising a first light emitter adapted to emit a first radiation, and a second light emitter adapted to emit a second radiation different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation, each radiation converter comprising a set of particles able to convert the third radiation into the first or second radiation, the particles of the first radiation converter being attached to a surface by a bulk of photosensitive resin and the particles of the second radiation converter being attached to a surface by grafting.

Emitting devices, associated display screen and methods for fabricating an emitting device

A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.

Coalesced nanowire structures with interstitial voids and method for manufacturing the same

The present invention provides a direct sampler and detector for analytes found in exhaled breath condensate. Analytes in the breath condensate are detected instantaneously as they condense prior to reaching the sensor surface or condense directly on the sensor surface. Because the analysis or assay is performed immediately after patient exhalation, analyte stability is significantly improved providing accurate, reliable, consistent, and clinically applicable results. In certain embodiments, combined breath condensate/breath samplers and detectors are provided, enabling multiplexed analysis of condensed and vapor-phase analytes provided in a single sampling session. Breath is collected and directed to one or more subsystems. Within each subsystem, the breath portion is either condensed or prevented from condensing. The technique also allows real-time continuous monitoring, thus allowing immediate feedback to both medical professionals and additional hardware such as ventilators, anesthesia machines, drug infusion systems and cardiac pacemakers.

Breath condensate sampler and detector and breath/breath condensate sampler and detector

Sensors and detection systems suitable for measuring analytes, such as biomolecule, organic and inorganic species, including environmentally and medically relevant volatiles and gases, such as NO, NO2, CO2, NH3, H2, CO and the like, are provided. Certain embodiments of nanostructured sensor systems are configured for measurement of medically important gases in breath. Applications include the measurement of endogenous nitric oxide (NO) in breath, such as for the monitoring or diagnosis of asthma and other pulmonary conditions.

Sensor having a thin-film inhibition layer

Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes inorganic gases, organic vapors, biomolecules, viruses and the like. A number of embodiments of capacitive sensors having alternative architectures are described. Particular examples include integrated cell membranes and membrane-like structures in nanoelectronic sensors.

Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices

Provided herein is a new hybrid material system, mCNT, including magnetic carbon nanotubes for biological and medical sensing applications. In certain embodiments, the systems include magnetic material on the interior of carbon nanotubes (CNTs). The amount of magnetic particles inside CNTs may be such that mCNT can respond to small, low cost, portable magnet. The exterior CNT surface is kept intact for biomolecular attachments or other functionalizations. Performance enhancement with this novel material includes improved sensitivity, reduced response time, and reduced sample volume. According to various embodiments, the mCNTs are substrates for the adherence of molecules participating in these assays or as active sensing elements. Also provided are methods of fabricating two-dimensional mCNT and CNT networks on printed electrodes.

Magnetic carbon nanotube based biodetection

Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes such ammonia. An environmental control system employing nanoelectronic sensors is described. A personnel safety system configured as a disposable badge employing nanoelectronic sensors is described. A method of dynamic sampling and exposure of a sensor providing a number of operational advantages is described.

Ammonia nanosensors, and environmental control system

Synthetic nanopore fabrication methods and structures are provided. Nanoscale transistor fabrication methods and structures are provided.

Methods of fabrication employing nanoscale mandrels

The method comprises forming barrier layers of AlGaAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

The invention provides an apparatus that produces analyte ions for detection by a detector. The apparatus includes a matrix based ion source having a target substrate including a carbon nanotube material for producing analyte ions, an ion transport system adjacent to the matrix based ion source for transporting analyte ions from the matrix based ion source; and an ion detector downstream from the ion transport system for detecting the analyte ions. The invention also provides a method for producing and detecting the analyte ions.

Target support and method

A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.

Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant

Growing community of inventors

Cupertino, CA, United States of America

Ying-Lan Chang