Industrial Technology Research Institute

Ying-Jung Chiang

Yuan-Ling Tsai

Hong-Ching Lin

Hsu-Shen Chu

Chun-An Lu

Ren-Der Jean

Jiun-Jang Yu

A flexible thermoelectric structure is provided, which includes a porous thermoelectric pattern having a first surface and a second surface opposite to the first surface, and a polymer film covering the first surface of the porous thermoelectric pattern. The polymer film fills pores of the porous thermoelectric pattern. The polymer film has a first surface and a second surface opposite to the first surface. The second surface of the polymer film is coplanar with the second surface of the porous thermoelectric pattern.

Method for manufacturing flexible thermoelectric structure

A capacitor is provided. The capacitor includes a first electrode layer and a second electrode layer; and a first dielectric layer and a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are disposed between the first electrode layer and the second electrode layer. The first dielectric layer includes a first dielectric powder and a first organic resin, and the second dielectric layer includes a second dielectric powder and a second organic resin. In particular, the weight ratio of the first dielectric powder to the first organic resin is greater than the weight ratio of the second dielectric powder to the second organic resin.

Capacitor with multiple dielectric layers having dielectric powder and polyimide

A metal conducting structure includes a first metal conducting layer, a second metal conducting layer, and a third metal conducting layer. The first metal conducting layer consists of a first polymer material and first metal particles. The first metal conducting layer is covered by the second metal conducting layer which is a structure with pores, the structure consists of second metal particles. The second metal conducting layer is covered by the third metal conducting layer. The pores of the second metal conducting layer are filled with a metal material of the third metal conducting layer.

Growing community of inventors

Hsinchu, Taiwan

Ying-Jung Chiang