Chunghwa Picture Tubes, Ltd.

Ying-Hui Chen

Chi-Neng Mo

Huang-Chung Cheng

Yen-Yu Huang

Ta-Chuan Liao

Ling Li

En-Chih Liu

Sheng-Kai Chen

Chia-Lin Liu

Wen-Hsiung Liu

Shian-Jun Chiou

Chi-Chung Tsai

Yi-Kai Chen

A display panel including a pixel array and a gate driver circuit is provided. The pixel array has a plurality of pixels. The gate driver circuit is used for providing a plurality of gate signals to the pixels and includes a plurality of shift registers and a plurality of demultiplexers. The shift registers respectively receive a first gate signal of the gate signals and a first clock signal of a plurality of clock signals to respectively provide a first control signal and a second control signal. The demultiplexers respectively receive a plurality of second clock signals of the clock signals, respectively turn-on according to the first control signal provided by the corresponding one of the shift registers, and respectively cut-off according to the second control signal provided by the corresponding one of the shift registers.

Display panel

A thin film transistor including a gate, a channel, a stopper layer, a source and a drain is provided. The channel and the gate are overlapped. The stopper layer covers a portion of the channel and has a ring-shape hole exposing two opposite connecting portions of the channel. A portion of the stopper layer is disposed between the source and the channel and between the drain and the channel. The source and the drain are filled in the ring-shape hole of the stopper layer and electrically connected to the connecting portions of the channel. Moreover, a pixel structure including the thin film transistor is provided.

Thin film transistor with a ring-shaped hole of a stopper layer and pixel structure having the thin film transistor

A capacitive touch display panel includes a first substrate, a second substrate, an opaque pattern, a plurality of transparent conductive sensor pads, and a plurality of non-transparent conductive patterns. The first substrate and the second substrate are disposed oppositely. The transparent conductive sensor pads are disposed on the second substrate. The non-transparent conductive patterns are disposed on the second substrate, and the non-transparent conductive patterns and the transparent conductive sensor pads are electrically connected and overlapping. The conductivity of the non-transparent conductive patterns is higher than that of the transparent conductive sensor pads, and the non-transparent conductive patterns are corresponding to the opaque pattern.

Capacitive touch display panel

A liquid crystal display device includes a plurality of gate lines, a plurality of data lines, a pixel array, a gate driver, a timing controller, and an optimization circuit. Each pixel unit in the pixel array displays images according to the gate driving signal received from a corresponding gate line and the data driving signal received from a corresponding data line. According to an optimized reference value, the timing controller provides an output enable signal, based on which the gate driver outputs the gate driving signals. The optimization circuit receives a first grayscale data related to display images of a row of pixel units in a first driving period and a second grayscale data related to display images of the row of pixel units in a second driving period, and provides the optimized reference value according the difference between the first and second grayscale data.

Liquid crystal display device with adaptive charging/discharging time and related driving method

A manufacturing method of a thin film transistor is provided. An insulating pattern layer having at least one protrusion is formed on a substrate. At least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. The spacer and the amorphous semiconductor patterns are crystallized. The protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. A carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.

Manufacturing method of a thin film transistor

A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. Later, the spacer and the amorphous semiconductor patterns are crystallized. Subsequently, the protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. Then, a carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.

Thin film transistor and manufacturing method thereof

A method of adjusting the brightness of a display device is provided. The method includes providing a plurality of saturated level-adjust voltages to various level adjustments of the display device when the central brightness is saturated. Then, a computation of the saturated level-adjust voltage of each level adjustment is carried out to obtain a display voltage of each level adjustment. Thereafter, a computation of the saturated level-adjust voltage, a common voltage and the display voltage of each level adjustment is carried out to obtain a feed-through voltage for each level adjustment. After that, a computation of the feed-through voltage and the saturated level-adjust voltage of each level adjustment is carried out to obtain a liquid crystal capacitance value for each level adjustment. Finally, a simulation of the liquid crystal capacitance value of each level adjustment is carried out to obtain an optimized level-adjust voltage for each level adjustment.

Growing community of inventors

Taoyuan, Taiwan

Ying-Hui Chen