Taiwan Semiconductor Manufacturing Comp. Ltd.

Ying-Hsueh Changchien

Chi-Ming Yang

Yu-Ming Lee

A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; providing a mixture of phosphoric acid and a silicon-containing material; and delivering the mixture to the surface of the wafer to remove the silicon nitride. Single wafer etching apparatuses of selectively removing silicon nitride are also provided.

Method of selectively removing silicon nitride and single wafer etching apparatus thereof

An electro-chemical plating process begins with supplying a supercritical fluid into an electroplating solution to be deposited, and a bias is applied between a substrate and an electrode, which is located in the electroplating solution. The substrate is placed into the electroplating solution to deposit a material on the substrate.

Apparatus and process of electro-chemical plating

A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided.

Method of selectively removing silicon nitride and etching apparatus thereof

A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal. Using chemical including acidic chemical for hard mask layer removal is cheaper and the resource can be easily generated by equipment. Thus the chemical for hard mask layer removal can be drained directly and need not be recycled.

Hard mask removal scheme

A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal.

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Hsinchu, Taiwan

Ying-Hsueh Changchien