Taiwan Semiconductor Manufacturing Comp. Ltd.

Ying-Hsiu Tsai

Jiun-Yu Lai

Wei-Chen Chang

Yi-Ching Chiou

Joung-Wei Liou

Chia-Hui Lin

Szu-An Wu

Ming-Te Chen

Chien-Feng Lin

Tsang-Yu Liu

Cheng-Liang Chang

Yin-Ping Lee

Polishing systems and methods for polishing a substrate are provided. The method includes polishing a substrate using a polishing pad and monitoring a thickness of the polishing pad. The monitoring of the thickness of the polishing pad is performed by detecting an eddy current generated from a conductor element below a bottom surface of the polishing pad. The method also includes replacing the polishing pad with a second polishing pad if the thickness of the polishing pad is smaller than a predetermined value.

System and method for polishing substrate

Polishing systems and methods for polishing a substrate are provided. The polishing system includes a polishing assembly having a platen and a polishing pad over the platen. The polishing system also includes a substrate carrying assembly configured to engage a substrate to the polishing pad. The polishing system further includes a thickness sensing assembly configured to monitor a thickness of the polishing pad.

A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.

High aspect ratio gap fill application using high density plasma chemical vapor deposition

Growing community of inventors

Hsinchu, Taiwan

Ying-Hsiu Tsai