The Hong Kong University of Science and Technology

University of Macau

Ying Hoi Lai

Iam Keong Sou

Yi Liu

Kam Weng Tam

Wai Yip Cheung

Shu Kin Lok

Qinglin He

George Ke Lun Wong

Sut Kam Ho

A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.

Semiconductor device and method of forming the same

A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a transparent Schottky metal layer.

MgS solar-blind UV radiation detector

Growing community of inventors

Hong Kong, China

Ying Hoi Lai