Changxin Memory Technologies, Inc.

Microsoft Technology Licensing, LLC

Chinese Academy of Sciences

Other

International Business Machines Corporation

Gree Electric Appliances, Inc. of Zhuhai

Tongji University

Shanghai Zhaoxin Semiconductor Co., Ltd.

Alibaba Group Holding Limited

Advanced New Technologies Co., Ltd.

Gree Electric Appliances (wuhan) Co., Ltd

Dongguan Amperex Technology Limited

Mabwell (shanghai) Bioscience Co., Ltd.

Jiangsu Mabwell Health Pharmaceutical R&d Co., Ltd.

Sapiens Environmental Technology Co., Ltd.

Ying Chu Wang

Sungsoo Chi

Min Li

Mengyan Lu

Yi Zhou

WeiBing Shang

Deming Gu

Fengting Li

Fengxia Wu

Hao Yang

Huanlong Wu

Yong Qing Lu

Tao Feng

Liang Li

Yufei Li

Jia Wang

Shuyan Jin

Yunlong Tan

Dongchang Yi

Qingwan Lin

Renchun Zhou

Jiakuan Hu

Yu Wang

Liang Zhang

Qing Feng Zhang

Feng Lin

Xin Wang

Wei Zhang

Yu Zou

Jun Wu

Qing Zhang

Fengqin Zhang

KangLing Ji

Huanmi Yin

Bing Li

Yijun Lu

Kanyu Cao

Bo Yang

Shilie Pan

Jingkang Shen

Tao Wang

Hongwen Li

Mingzhu Dong

Jie Wang

Yi Liu

Dechao Song

Yi Jin

Ling Xu

Heng Que

Sihai Yao

Huijie Huang

Ting Yu

Tao Meng

Aijun Zeng

Lanping Ma

Ping Zhang

Hong Tang

Tangtang Gu

Jun Song

Hongli Peng

Fangfang Zhang

Hong Zhou

Jin Shen

Daoxun Wu

Li Sun

Lingling Jin

Fang Fang

Yongliang Zhang

Rong Wang

Yunbo Zhang

Bangsheng Ming

Shan Ouyang

Jinyong Wang

Haiying Xian

Jia Huo

Xianjun He

Tao G Liu

Kangquan Xu

Zhengxiong Tian

Yuan Xu

Jiangwei Huang

Yong Dong

Yunfu Shen

Mengyun Zhang

Junjie Peng

Cui Lv

Xueqiao Wu

Guan Wang

Zhiyan Du

Lin Yu

Xuefei Wang

Shiwei Li

Xiaolin Meng

Dan Yang

Liping Yao

Fangxiao Hu

Qianhao Zhao

Mingxing Chen

Cheng Xu

Shiqiang Zhou

The present disclosure discloses three carotenoid esterases and the application of their encoding genes. The genes encoding the carotenoid esterase include: LbZAT1 gene with the nucleotide sequence as shown in SEQ ID NO:1, LbZAT2 gene with the nucleotide sequence as shown in SEQ ID NO:2, and/or LbZAT3 gene with the nucleotide sequence as shown in SEQ ID NO:3. The proteins encoded by the LbZAT1, LbZAT2 and LbZAT3 genes of the present disclosure have the function of catalyzing the esterification reaction between carotenoids containing free hydroxyl and fatty acid acyl donors. Carotenoid esterase and its encoding genes have important application value in the biosynthesis of esterified carotenoids in vitro.

Method and biological agent for catalyzing esterification of plant free carotenoids and transgenic plant

Cat litter box

A local amplifying circuit, a data readout method and a memory are provided. The local amplifying circuit includes: write control transistors, configured to connect a global data line to a local data line based on a write enable signal; column selection transistors, configured to connect a bit line to the local data line based on a column selection signal; a first control NMOS transistor, having a gate connected to the local data line, one of a source and a drain being connected to the global data line and the other being connected to a corresponding read control transistor; a second control NMOS transistor, having a gate connected to a complementary local data line, one of a source and a drain being connected to a complementary global data line and the other being connected to a corresponding read control transistor.

Local amplifying circuit, data readout method and memory

A column select signal cell circuit, a bit line sense circuit and a memory are disclosed. The column select signal cell circuit includes four column select cells, each of which includes 4*N input and output ports, 4*N bit line connection ports and one control port. The control ports of a first column select cell and a fourth column select cell are connected to a first column select signal, and the control ports of a second column select cell and a third column select cell are connected to a second column select signal. The bit line connection ports of the first column select cell and the third column select cell are connected to 8*N bit lines of a first storage unit group, the bit line connection ports of the second column select cell and the fourth column select cell are connected to 8*N bit lines of a second storage unit group.

Column select signal cell circuit, bit line sense circuit and memory

A local amplifier circuit includes write control transistors, configured to connect, based on write enable signal, global data line to local data line; column selection transistors, configured to connect, based on column selection signal, bit line to local data line; first control PMOS transistor having gate connected to local data line, one of source or drain connected to global data line, and the other one connected to read control transistor; and second control PMOS transistor having gate connected to complementary local data line, one of source or drain connected to complementary global data line, and the other one connected to read control transistor. Read control transistors are configured to pull up or down levels at terminals of first control PMOS transistor and second control PMOS transistor, each of which is source or drain connected to a respective one of read control transistors, to preset level based on read enable signal.

Local amplifier circuit, data readout method, and memory

The present application disclosures a double production line and a rapid prefabrication process of a segmental beam. The double production line including two production machine and a track system provided on the construction ground; the production machine includes a fixed end mold, two side molds, a bottom mold trolley, a middle internal mold trolley and two side internal mold trolley; two side molds are positioned on two sides of the fixed end mold respectively, the fixed end mold and two side molds together define a pouring position with an end opening, two openings of the pouring position are arranged facing each other; the track system includes a transverse track and a longitudinal track communicated with each other, two pouring positions are both positioned in the extension path of the transverse track, and the longitudinal track is positioned between two pouring positions.

Double production line and rapid prefabrication process of segmental beam

Gamepad

A memory is provided. The memory includes banks, each bank includes a U half bank and a V half bank; a first error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of output data of the U half banks and the V half banks; and a second error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of the output data of the U half banks and the V half banks.

Memory with error checking and correcting unit

The present application provides a battery including an electrode assembly, a package encapsulating the electrode assembly, and a plurality of bonding portions located between the package and the electrode assembly, wherein at least partially of the bonding portions are disposed at interval. The purpose of the present application is to provide a battery that reduces the tear risk of the aluminum foil and improves safety.

Battery

A bit line sense circuit and a memory are disclosed in the present application. The bit line sense circuit includes: L storage unit groups, each storage unit group including H bit lines, both L and H being positive integers greater than or equal to 2; and M sense amplifier groups, configured to write or read storage data to or from the bit lines in the storage unit groups and electrically connected to the L storage unit groups, M being an integer multiple of L or L being an integer multiple of M. Two adjacent bit lines of the H bit lines are connected to the different sense amplifier groups.

Bit line sense circuit and memory

The present disclosure provides a sense amplifier, a memory, and a data readout method, and relates to the field of semiconductor memory technologies. The sense amplifier includes a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a second NMOS transistor, a first switch, a second switch, a third switch, and a fourth switch. During the offset compensation stage of the sense amplifier, the switching states of the first switch to the fourth switch are controlled so that the first NMOS transistor and the second NMOS transistor are configured to be in a cross-coupled amplification mode, and the first PMOS transistor and the second PMOS transistor are configured to be in a diode connection mode. The present disclosure enables to realize the offset compensation of the sense amplifier and improves the correctness of data readout by the memory.

Sense amplifier, memory and data readout method

A sense amplifier includes a first switch unit, a second switch unit, and an amplifier-latch module. A first port of the amplifier-latch module is electrically connected, via the first switch unit, to a bit line connected with a storage unit, and a second port of the amplifier-latch module is electrically connected to a reference voltage signal via the second switch unit. The amplifier-latch module is configured to amplify a signal in a sensing amplification phase. The first switch unit is configured to transmit a voltage on the bit line to the first port before the sensing amplification phase. The second switch unit is configured to transmit the reference voltage signal to the second port before the sensing amplification phase, and disconnect an electrical connection between the reference voltage signal and the second port in the sensing amplification phase.

Sense amplifier, storage device and read-write method

A copper integrated electrode with a convertible oxidation state, a preparation method and an application method are provided. The preparation process is based on an electrochemically induced self-growth method. Copper foam is used as a precursor, soaked in a graphene oxide solution, dried, calcined at high temperature and annealed, and then treated with an alkali solution to obtain the copper integrated electrode with the convertible oxidation state. The working electrode prepared by the nano-catalytic material of the present invention has good denitrification performance in the environmental field, which can achieve nearly 100% nitrate removal rate, nearly 100% nitrogen selectivity and long-term stability. These properties are due to the prepared working electrode having an oxidizable copper (I, II/0, I), oxygen vacancy (O) and a one-dimensional nanowire structure. The structure can regulate the adsorption and reduction of intermediate products, resulting in nearly 100% nitrate removal rate and nearly 100% nitrogen selectivity.

Copper integrated electrode with convertible oxidation state and preparation method and application method thereof

The present invention provides a metal-organic framework material for the adsorptive separation of acetylene/ethylene mixture and preparation method therefor. The metal-organic framework material is named TJE-2 with a chemical formula of [Ni(pyc)(apyz)], wherein, Ni represents nickel as a metal center, pyc represents the organic ligand 1H-pyrazole-4-carboxylic acid, and apyz represents the organic ligand 2-aminopyrazine. The preparation method is as follows: thoroughly dissolving pyc, apyz and Ni(NO)HO, transferring the mixture to a pressure-resistant closed container for heating reaction, followed by solvent exchange and activation to obtain a homogeneous powder material. The ultra-microporous metal-organic framework material prepared by the present invention features a significantly high CHadsorption capacity, good selectivity, and low raw material costs, and therefore can realize CH/CHseparation at lower costs.

Metal-organic framework for adsorptive separation of acetylene/ethylene mixture and preparation method therefor

A technical document scanner disclosed herein determines and categorizes various common issues among a large number of documents. An implementation of the technical document scanner is implemented using various computer process instructions including scanning a technical document to extract content, applying named entity recognition on the extracted content from the technical document to extract named entities, applying relation extraction on the named entities to extract relations between the named entities, and analyzing the relations between the entities to compose lists of high relevance entities for issue checking.

Technical document issues scanner

Growing community of inventors

Beijing, China

Ying Chu Wang