Taiwan Semiconductor Manufacturing Comp. Ltd.

Ying-Chieh Hung

Yi-Hung Lin

Da-Yuan Lee

Ming-Hsing Tsai

Weng Chang

Hsueh Wen Tsau

Cheng-Yen Tsai

JoJo Lee

Tze-Liang Lee

Ming-Hua Yu

Yu-Ting Huang

Yu-Wei Chou

Jet-Rung Chang

Sheng-Shin Lin

Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).

Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby

A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.

Metrology system and measurement method using the same

A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.

System and method for damage reduction in light-assisted processes

A method for measuring an implant dosage distribution of a semiconductor sample is provided. The method includes generating a photomodulation effect in a three-dimensional structure of the semiconductor sample and measuring a reflection information of the three-dimensional structure. A geometry information of the three-dimensional structure of the semiconductor sample is obtained. The geometry information of the three-dimensional structure is converted into an estimated reflective data. The reflection information is compared with the estimated reflective data to determine the implant dosage distribution of the three-dimensional structure of the semiconductor sample.

Growing community of inventors

Hsinchu, Taiwan

Ying-Chieh Hung