Delta Electronics, Inc.

Ancora Semiconductors Inc.

Ying-Chen Liu

Li-Fan Lin

Wen-Chia Liao

Chun-Chieh Yang

Chen-Ting Chiang

Chang-Jing Yang

Wei-Hsiang Chao

Hong-Sheng Wang

A clamp circuit is provided. The clamp circuit includes a major Gallium Nitride (GaN) transistor, a miller GaN transistor, and a capacitor circuit. The major GaN transistor () includes a major gate, a major drain, and a major source coupled to a first node. The miller GaN transistor includes a miller gate coupled to a second node, a miller drain coupled to the major gate, and a miller source coupled to the first node. The capacitor circuit is coupled between the major drain and the second node.

Clamp circuit

A semiconductor device includes an active layer having first and second active regions, first and second source electrodes, first and second drain electrodes, first and second gate electrodes, a first source metal layer, first and second drain metal layers, and a source pad electrically connected to the first source metal layer. The second drain metal layer is electrically connected to the second drain electrode and the first source metal layer. A projection of the second drain metal layer on the active layer forms a drain metal layer region. An projection of the source pad on the active layer forms a source pad region. An area of an overlapping region between the source pad region and the drain metal layer region is smaller than or equal to 40% of an area of the drain metal layer region.

Semiconductor device including source pad region and drain pad region configured to improve current uniformity and reduce resistance

A semiconductor device includes an active layer having an active region, a source electrode, a drain electrode, a gate electrode, a source metal layer, a drain metal layer, and a source pad. The source metal layer and the drain metal layer are electrically connected to the source electrode and the drain electrode, respectively. An orthogonal projection of the drain metal layer on the active layer each forms a drain metal layer region. The source pad is electrically connected to the source metal layer. An orthogonal projection of the source pad on the active layer forms a source pad region overlapping the drain metal layer. An area of an overlapping region between the source pad region and the drain metal layer region is smaller than or equal to 40% of an area of the drain metal layer region.

Semiconductor device having reduced capacitance between source and drain pads

A semiconductor structure is provided, which includes a semiconductor device, a first conductive layer, and a gate runner. The semiconductor device includes an upper surface, a gate terminal, a source terminal, and a drain terminal. The first conductive layer is deposited on the upper surface and coupled to the source terminal. The gate runner is overlapped with the first conductive layer and coupled to the gate terminal. The gate runner and the first conductive layer are configured to contribute a parasitic capacitance between the gate terminal and the source terminal.

Enclosed gate runner for eliminating miller turn-on

A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, a source pad, a drain pad, and a source external connecting element. The source electrode, the drain electrode, and the gate electrode are disposed on an active region of the active layer. The source pad is electrically connected to the source electrode and includes a body portion, a plurality of branch portions, and a current diffusion portion. The body portion is at least partially disposed on the active region of the active layer. The current diffusion portion interconnects the body portion and the branch portions. A width of the current diffusion portion is greater than a width of the branch portion and less than a half of a width of the body portion. The source external connecting element is disposed on the body portion and spaced from the current diffusion portion.

Growing community of inventors

Taoyuan, Taiwan

Ying-Chen Liu