Nicira, Inc.

Applied Materials, Inc.

Yin Lin

Ganesan Chandrashekhar

Vivek Agarwal

Mukesh Hira

Nithin Bangalore Raju

Anand Kumar

Shashank Ram

Sairam Venugopal

Ming Xi

Fufa Chen

Jianhua Hu

Frederick C Wu

Li Wu

Yehuda Demayo

A physical host machine of a public cloud system includes a set of processing units for executing instructions stored in non-transitory machine readable media. The physical host machine also includes a physical network interface cars (PNIC) and a non-transitory machine readable medium that stores a data compute node (DCN). The DCN includes first and second applications, first and second logical interfaces, a network stack, and a managed forwarding element (MFE). The first application is connected to the pNIC through the network stack, the first logical interface, and the MFE. The second application is connected to the PNIC through the network stack, the second logical interface, and the MFE.

Accessing endpoints in logical networks and public cloud service providers native networks using a single network interface and a single routing table

A data compute node executes (i) a set of tenant applications connected to a third party overlay network, (ii) a set of network manager applications, and (iii) a managed forwarding element that includes a pair of overlay and underlay network virtual adapters. A packet that is received from a network manager application and addressed to an underlay network destination is sent to the underlay network destination address through a physical NIC of the host without network address translation or encapsulation. A packet that is received from a tenant application and addressed to an underlay network destination is subject to SNAT and is sent to the underlay network destination address. A packet that is received from a tenant application and is addressed an overlay destination address is encapsulated with the header of the overlay network and is sent to the overlay network destination address through the underlay virtual adapter.

Packet communication between logical networks and public cloud service providers native networks using a single network interface and a single routing table

The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 &angst; and, particularly greater than 1000 &angst;, and a resistivity of less than about 175 &mgr;&OHgr;cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 &angst; was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 &angst; were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient. The TiN film formed in this manner not only had a resistivity of less than about 175 &mgr;&OHgr;cm, but was substantially free of micro cracks as well, including films having a thickness greater than 1,000 &angst;.

Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 &angst;

The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi,) and ammonia (NH,). A Ti film is subject to a treatment of NH,gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl,/NH,reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 &angst;.

Method of performing titanium/titanium nitride integration

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Mountain View, CA, United States of America

Yin Lin