University of California

Yimu Chen

Sheng Xu

Yusheng Lei

In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.

Strain engineering and epitaxial stabilization of halide perovskites

A method of fabricating an ionic crystal includes providing a single crystal substrate of an ionic crystal material is provided. A patterned mask is applied over the single crystal substrate A growth solution is introduced over the single crystal substrate. The growth solution includes precursors for epitaxial growth of the ionic crystal material on the single crystal substrate such that epitaxial crystals grow over time through pattern openings in the patterned mask into a crystal structure with one or more morphologies.

Fabrication process for flexible single-crystal perovskite devices

Organic-inorganic hybrid perovskite has demonstrated tremendous potential for the next generation of electronic and optoelectronic devices due to their remarkable carrier dynamics. However, current studies of electronic and optoelectronic devices have been focused on polycrystalline materials, due to the challenges in synthesizing device compatible high quality single crystalline materials. Here, we firstly report the epitaxial growth of single crystal hybrid perovskites with controlled locations, morphologies, and orientations, using combined strategies of lithography, homoepitaxy, and low temperature solution method. The crystals grow following a layer-by-layer model under controlled growth parameters. The process is robust and can be readily scaled up. The as-grown epitaxial single crystals were integrated in an array of light emitting diodes, each crystal as a pixel with enhanced quantum efficiencies. This capability opens up new opportunities for designing and fabricating a diverse range of high performance electronic and optoelectronic devices using crystalline hybrid perovskites.

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La Jolla, CA, United States of America

Yimu Chen