Applied Materials, Inc.

Yiming Lai

Avgerinos V Gelatos

He Ren

Yu Lei

Kai Wu

Yi Xu

David T Or

Xi Cen

Yakuan Yao

Mehul B Naik

Hao Chen

Kevin Kashefi

Lin Dong

Mang-Mang Ling

Mei Yin Chang

Kazuya Daito

Raymond Hoiman Hung

Vikash Banthia

Guoqiang Jian

Chi-Chou Lin

Jing Zhou

Feiyue Ma

Jenn-Yue Wang

Jia Ye

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

Multi-step pre-clean for selective metal gap fill

The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

Method for forming a metal gapfill

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San Jose, CA, United States of America

Yiming Lai