Skyworks Solutions, Inc.

Skyworks Global Pte. Ltd.

Yiliu Wang

Tomoya Komatsu

Jiansong Liu

Kwang Jae Shin

Alexandre Augusto Shirakawa

Nan Wu

Jae Hyung Lee

Jong Duk Han

Yosuke Hamaoka

Benfeng Zhang

Rei Goto

Yasufumi Kaneda

Xiao Zhang

Joshua James Caron

Akira Ochiai

Jinbaek Song

Takashi Hayashi

Hironori Sano

Stephane Richard Marie Wloczysiak

Joji Fujiwara

Benjamin Paul Abbott

Chun Sing Lam

Li Chen

Toru Jibu

Yu Hui

Yuhao Liu

Nobufumi Matsuo

Xianyi Li

Motoyuki Tajima

Taecheol Shon

Tetsuya Tsurunari

A ladder filter comprises series arm bulk acoustic wave resonators electrically connected in series between an input port and an output port and shunt bulk acoustic wave resonators electrically connected between adjacent ones of the series arm bulk acoustic wave resonators and ground, each of the arm bulk acoustic resonators including a central active region and a raised frame region outside of the central active region, each of the series arm bulk acoustic resonators including a piezoelectric film, at least one of the series arm bulk acoustic wave resonators including a layer of oxide disposed directly on the piezoelectric film in the raised frame region, and a metal layer disposed directly on the piezoelectric film in the central active region and on the layer of oxide in the raised frame region, the metal layer having a thickness in the raised frame region no greater than in the central active region.

Bulk acoustic wave resonator with oxide raised frame

A radio frequency duplexer comprises a transmit filter including a first plurality of acoustic wave resonators, and a receive filter including a second plurality of acoustic wave resonators. The transmit filter exhibits a transmit insertion loss curve that partially overlaps with a receive insertion loss curve of the receive filter, a frequency range of the overlap of the transmit insertion loss curve and receive insertion loss curve defining a frequency range of crossover of the duplexer. At least one of the first plurality of acoustic wave resonators or the second plurality of acoustic wave resonators include a structure configured to generate a spurious signal at a frequency within the frequency range of the crossover to reduce an amplitude of an interference signal within the frequency range of the crossover.

Crossover reduction for acoustic duplexers by spurious modes

Aspects of this disclosure relate to an acoustic wave device with a plurality of piezoelectric layers positioned laterally relative to each other between two electrodes. One of the piezoelectric layers has a different property than another of the piezoelectric layers. Examples of the different property include c-axis orientation, doping concentration, dopant material, and piezoelectric material. At least part of each of the piezoelectric layers can be in a main acoustically active region of the acoustic wave device.

Acoustic wave device having multiple piezoelectric layers between electrodes

Aspects of this disclosure relate to an acoustic wave filter that includes a multi-mode surface acoustic wave filter and a ladder section. The multi-mode surface acoustic wave filter has a higher impedance at an output than at an input. The ladder section is connected to the output of the multi-mode surface acoustic wave filter. Related radio frequency systems, radio frequency modules, wireless communication devices, and methods are disclosed.

Multi-mode surface acoustic wave filter with impedance conversion

According to the present disclosure, a passband filter is provided. The passband filter comprises a first connection, a second connection, and a third connection. One or more resonators of a first type are provided connected in series between the first connection and the second connection; and one or more resonators of a second type are provided connected from between the first connection and the second connection to the third connection. A radio-frequency front end module and wireless mobile device are also provided.

Passband filter combining resonators of a first type and resonators of a second type

Aspects of this disclosure relate to an acoustic wave filter with series bulk acoustic wave resonators. In some embodiments, the acoustic wave filter is a band pass filter having a pass band. One of the series bulk acoustic wave resonators can contribute to forming a lower edge of the pass band. That series bulk acoustic wave resonator can be smaller than another series bulk acoustic wave resonator of the acoustic wave filter.

Acoustic wave filter with series resonator for filter steepness

A filter is disclosed. The filter can be a band pass filter or a band rejection filter. The filter can have bulk acoustic wave resonators. The filter can include a shunt bulk acoustic wave resonator and a series bulk acoustic wave resonator. The shunt bulk acoustic wave resonator and the series bulk acoustic wave resonator include different raised frame structures. The different raised frame structures contribute to one of the shunt bulk acoustic wave resonator or the series bulk acoustic wave resonator to have a higher quality factor below a resonant frequency than the other.

Filters with bulk acoustic wave devices

Methods of manufacturing bulk acoustic wave resonators are disclosed. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.

Methods of manufacturing bulk acoustic wave resonators with patterned mass loading layers

A packaged acoustic wave component has a device substrate and a metal layer disposed over the device substrate. An acoustic wave device is disposed over at least a portion of the metal layer so that the metal layer is interposed between the device substrate and at least a portion of the acoustic wave device. A cap substrate is spaced above the device substrate, and peripheral wall that is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the acoustic wave device. One or more vias extend through the device substrate and are disposed under the metal layer.

Acoustic wave filter with buried connection layer under resonator

Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.

Bulk acoustic wave resonators with patterned mass loading layers

Aspects of this disclosure relate to an acoustic wave filter with shunt bulk acoustic wave resonators. In some embodiments, the acoustic wave filter is a band pass filter having a pass band. One of the shunt bulk acoustic wave resonators can contribute to forming an upper edge of the pass band. That shunt bulk acoustic wave resonator can be smaller than another shunt bulk acoustic wave resonator of the acoustic wave filter.

Acoustic wave filter with shunt resonator for filter steepness

A multimode longitudinally coupled surface acoustic wave resonator is disclosed. The multimode longitudinally coupled surface acoustic wave resonator can include a first interdigital transducer electrode that is positioned over a piezoelectric layer. The first interdigital transducer electrode includes fingers having a first pitch. The multimode longitudinally coupled surface acoustic wave resonator can also include first and second sets of reflectors that are positioned over the piezoelectric layer. The first and second sets of reflectors include a first number of reflectors having a second pitch and a second number of reflectors having a third pitch, respectively. The first pitch is greater than the second pitch. The multimode longitudinally coupled surface acoustic wave resonator can further include a second interdigital transducer electrode that is positioned over the piezoelectric layer and between the first interdigital transducer electrode and the first set of reflectors. The second interdigital transducer electrode includes fingers having a fourth pitch.

Surface acoustic wave resonator with asymmetric reflectors

A filter assembly operating at wider passband with an enhanced reflection coefficient is provided herein. In certain embodiments, the filter assembly comprises a first filter configured to allow signals received via an antenna node to pass at a first passband, the first filter including a plurality of resonators connected in series and parallel arms, the plurality of resonators of the first filter including a first type of resonator configured to broaden the first passband, at least a series resonator nearest to the antenna node or a shunt resonator nearest to the antenna node among the plurality of resonators of the first filter being a second type of resonator configured to improve reflection characteristics at a stopband of the first filter, and a second filter configured to allow the signals received via the antenna node to pass at a second passband using the second type of resonators.

Filter assembly operating at a wider passband with improved reflection coefficient

A surface acoustic wave resonator that has at least a first resonant frequency and a second resonant frequency is disclosed. The surface acoustic wave resonator can include an interdigital transducer electrode over a piezoelectric layer. The interdigital transducer electrode includes fingers having a first pitch. The surface acoustic wave resonator can also include a set of reflectors that is positioned over the piezoelectric layer. The set of reflectors includes a number of reflectors having a second pitch. The first pitch is greater than the second pitch. The number of reflectors is configured so as to compensate for degradation of a quality factor of the surface acoustic wave resonator due to having the first pitch greater than the second pitch.

Surface acoustic wave resonator with modulated pitch

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

Growing community of inventors

Irvine, CA, United States of America

Yiliu Wang