Samsung Electronics Co., Ltd.

Yikoan Hong

Hoonjoo Na

Seokho Kim

Kyuha Lee

Jaehyung Park

Joohee Jang

Seongmin Son

Kwangjin Moon

Pilkyu Kang

A semiconductor package includes a first semiconductor chip, a second semiconductor chip, first main connection pad structures, and first dummy connection pad structures. The first main connection pad structures are arranged at an interface between the first semiconductor chip and the second semiconductor chip and arranged to be apart from each other by a first main pitch in a first direction parallel to a top surface of the first semiconductor chip, wherein each of the first main connection pad structures includes a first connection pad electrically connected to the first semiconductor chip, and a second connection pad electrically connected to the second semiconductor chip and contacting the first connection pad. The first dummy connection pad structures are arranged at an interface between the first semiconductor chip and the second semiconductor chip, are arranged to be apart from the first main connection pad structures, and are arranged to be apart from each other by a first dummy pitch in the first direction, the first dummy pitch being greater than the first main pitch.

Semiconductor packages

A semiconductor package includes main pad structures and dummy pad structures between a first semiconductor chip and a second semiconductor chip. The main pad structures include first main pad structures apart from one another on the first semiconductor chip and second main pad structures placed apart from one another on the second semiconductor chip and bonded to the first main pad structures. The dummy pad structures include first dummy pad structures including first dummy pads apart from one another on the first semiconductor chip and first dummy capping layers on the first dummy pads, and second dummy pad structures including second dummy pads apart from one another on the second semiconductor chip and second dummy capping layers on the second dummy pads. The first dummy capping layers of the first dummy pad structures are not bonded to the second dummy capping layers of the second dummy pad structures.

Semiconductor package for improving bonding reliability

A method of manufacturing a semiconductor device according to example embodiments includes: sequentially forming first through third insulating layers on a substrate; forming an opening by etching the first through third insulating layers; forming a conductive layer configured in the opening; forming a fourth insulating layer in the opening after the forming of the conductive layer; and removing a portion of an edge region of the substrate after the forming of the fourth insulating layer.

Methods of manufacturing semiconductor devices

Growing community of inventors

Yongin-si, South Korea

Yikoan Hong