Ut-battelle, Inc.

Yijing Y Stehle

Ivan Vlassiouk

Frederick Alyious List, Iii

Sergei Smirnov

Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.

Growing community of inventors

Oak Ridge, TN, United States of America

Yijing Y Stehle