Taiwan Semiconductor Manufacturing Comp. Ltd.

Yihuei Zhu

Yuan-Tai Tseng

Kuo-Chyuan Tzeng

Chung-Chiang Min

Chang-Chih Huang

Some embodiments relate to a memory device. The memory device includes a first electrode overlying a substrate. A data storage layer is disposed on the first electrode. A second electrode overlies the data storage layer. A buffer layer is disposed between the data storage layer and the second electrode.

Buffer layer in memory cell to prevent metal redeposition

Some embodiments relate to a memory device. The memory device includes a first electrode overlying a substrate. A data storage layer overlies the first electrode. A second electrode overlies the data storage layer. A conductive bridge is selectively formable within the data storage layer to couple the first electrode to the second electrode. An active metal layer is disposed between the data storage layer and the second electrode. A buffer layer is disposed between the active metal layer and the second electrode. The buffer layer has a lower reactivity to oxygen than the active metal layer.

Growing community of inventors

Hsinchu, Taiwan

Yihuei Zhu