Taiwan Semiconductor Manufacturing Comp. Ltd.

Yih-Chen Su

Hsin-Chang Lee

Pei-Cheng Hsu

Chia-Jen Chen

Chin-Hsiang Lin

Ta-Cheng Lien

Tran-Hui Shen

Chien-Cheng Chen

Gaston Lee

Jong-Yuh Chang

Tzu Yi Wang

Chi-Kuang Tsai

Anthony Yen

Yun-Yue Lin

Hung-Chang Hsieh

Chao-Tzung Tsai

A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.

Method for extreme ultraviolet lithography mask treatment

A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Lithography mask with a black border regions and method of fabricating the same

A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.

Lithography mask with a black border region and method of fabricating the same

A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.

Method of making a lithography mask

A method for reducing the dimension of a patterned organic photoresist area by reducing the pressure of a reactive environment surrounding the patterned photoresist to cause outgasing. The outgased materials CHOare then decomposed in the reactive environment leaving the outgased photoresist porous. The environment surrounding the patterned photoresist is then increased to atmospheric pressure, which compresses or shrinks the porous photoresist. Photoresist lines having a dimension as small as about 0.085 &#x3bc;m can be obtained.

Method to reduce photoresist mask line dimensions

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Taichung, Taiwan

Yih-Chen Su