Nxp Usa, Inc.

Freescale Semiconductor,inc.

Yifeng Liu

Song Huang

Wanggen Zhang

Jian Zhou

Chao Liang

Zhe Chen

Shayang Zhang

Lei Ji

Zhou Fang

Embodiments provided herein include a method for a clock gating verification during a register transfer level (RTL) circuit design stage, including: obtaining clock gating information defined in a clock gating (CG) specification according to a clock gating format, wherein the clock gating information describes a target clock gating behavior of at least a first gated clock signal utilized by an integrated circuit design, the CG specification comprises a template structure defining a relationship between an output gated clock and an input clock, based on an enable condition, and a top mapping associating top level signals, including the first gated clock signal, of the integrated circuit design to the template structure; and automatically generating a first clock gating (CG) checker to verify a clock gating behavior, based on an expected output time and an expected gated time during testing of the integrated circuit design.

Clock gating verification during RTL stage of integrated circuit design

A built-in-self-test (BIST) circuit is connected to a processor and a sigma-delta modulator (SDM) and includes an averaging circuit, a reference signal generator, and a comparator. The averaging circuit calculates an average of a sum of a set of bit signals of the SDM output signal over a period of time period, and generates an average SDM signal. The reference signal generator generates a reference SDM signal based on an SDM input signal. The comparator compares the voltage levels of the average SDM and reference SDM signals with a threshold value, and generates a test output signal based on the comparison.

Built-in-self-test circuit for sigma-delta modulator

A state retention power gated (SRPG) cell includes an input control circuit having an input coupled to an input signal and an output. The input control circuit includes has transistors configured as a first inverter transmission gate. The transistors also connect in series at least one transistor controlled by a power gating signal. A first latch has an input coupled to the output of the input control circuit and an output. A transmission gate has an input coupled to the output of the first latch and an output that is an output of the SRPG cell. A second latch has an input coupled to the output of the transmission gate and an output that also is an output of the SRPG cell. A second inverter transmission gate has an input coupled to the output of the second latch.

State retention power gated cell

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Suzhou, China

Yifeng Liu