Micron Technology Incorporated

Other

Yifen Liu

Justin D Shepherdson

George Matamis

Nancy M Lomeli

Chet E Carter

Erik R Byers

Kishore Kumar Muchherla

Peter Sean Feeley

Sampath K Ratnam

Violante Moschiano

Mark Alan Helm

Brenda D Kraus

Giuseppina Puzzilli

Tecla Ghilardi

Naiming Liu

Yingda Dong

Akira Goda

Jordan D Greenlee

John Mark Meldrim

Farrell Martin Good

Albert Fayrushin

Byeung Chul Kim

Sok Han Wong

Xin Lan

Yun Huang

Everett A Mcteer

Ye Xiang Hong

Yan Song

An electronic device includes a stack structure including vertically alternating dielectric materials and conductive materials, the conductive materials including first regions and second regions, and pillars extending vertically through the stack structure, the pillars adjacent to the second regions of the conductive materials. The pillars include cell films adjacent to the second regions, the cell films including a high-k dielectric material, a barrier oxide material, a storage node material, a tunneling material, and a channel material. Segments of each of the high-k dielectric material, the barrier oxide material, and the storage node material are adjacent to the second regions. A length of the segments of high-k dielectric material and a length of the segments of storage node material adjacent to the second regions are greater than a height of the first regions of the conductive materials. Related methods and systems are also disclosed.

Electronic devices comprising segmented high-k dielectric materials and storage node materials, related systems, and methods of forming

A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures, and central region vertically interposed between the interfacial regions. The interfacial regions are doped with one or more of carbon and boron. The insulative structures comprise a lower concentration of the one or more of carbon and boron than the interfacial regions. Additional microelectronic devices, electronic systems, and methods are also described.

Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods

A microelectronic device comprises a first set of tiers, each tier of the first set of tiers comprising alternating levels of a conductive material and an insulative material and having a first tier pitch, a second set of tiers adjacent to the first set of tiers, each tier of the second set of tiers comprising alternating levels of the conductive material and the insulative material and having a second tier pitch less than the first tier pitch, a third set of tiers adjacent to the second set of tiers, each tier of the third set of tiers comprising alternating levels of the conductive material and the insulative material and having a third tier pitch less than the second tier pitch, and a string of memory cells extending through the first set of tiers, the second set of tiers, and the third set of tiers. Related microelectronic devices, electronic systems, and methods are also described.

Memory devices including different tier pitches, and related electronic systems

An electronic device comprises a stack of alternating dielectric materials and conductive materials, a pillar region extending vertically through the stack, an oxide material within the pillar region and laterally adjacent to the dielectric materials and the conductive materials of the stack, and a storage node laterally adjacent to the oxide material and within the pillar region. A charge confinement region of the storage node is in horizontal alignment with the conductive materials of the stack. A height of the charge confinement region in a vertical direction is less than a height of a respective, laterally adjacent conductive material of the stack in the vertical direction. Related methods and systems are also disclosed.

Electronic devices comprising reduced charge confinement regions in storage nodes of pillars and related methods

An example memory sub-system comprises: a memory device; and a processing device, operatively coupled with the memory device. The processing device is configured to: receive a first host data item; store the first host data item in a first page of a first logical unit of a memory device, wherein the first page is associated with a fault tolerant stripe; receive a second host data item; store the second host data item in a second page of the first logical unit of the memory device, wherein the second page is associated with the fault tolerant stripe, and wherein the second page is separated from the first page by one or more wordlines including a dummy wordline storing no host data; and store, in a third page of a second logical unit of the memory device, redundancy metadata associated with the fault tolerant stripe.

Implementing fault tolerant page stripes on low density memory systems

Methods and apparatuses associated with rebooting a computing device are described. Examples can include receiving at a processing resource of a computing device first signaling associated with boot programs of the computing device and second signaling associated with a boot sequence of the computing device. Examples can include writing from the processing resource to a memory resource data that is based at least in part on the first and the second signaling and writing from the processing resource to the memory resource data representative of activity of the computing device. Examples can include identifying data representative of a boot process for the computing device and rebooting the computing device in a particular sequence including the monitored activity, based at least in part on the data representative of the boot process responsive to a shutdown, restart, or both, of the computing device.

Computing device reboot

Microelectronic devices including varying tier pitch, and related electronic systems

Microelectronic devices including a varying tier pitch, and related electronic systems and methods

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Boise, ID, United States of America

Yifen Liu