Qualcomm Incorporated

Yido Koo

Jeongsik Yang

Young Gon Kim

Emilia Vailun Lei

Yongwang Ding

Burcin Baytekin

Xiaoyu Wang

Ji-Hoon Park

Wei-Han Cho

Certain aspects relate to a semiconductor die. The semiconductor die includes a voltage-controlled oscillator (VCO), wherein the VCO includes a resonant capacitor, and a resonant inductor coupled in parallel with the resonant capacitor. The resonant inductor includes a first elongated portion and a second elongated portion that are parallel with each other. The semiconductor die also includes a voltage supply line configured to route a supply voltage to the VCO, wherein the voltage supply line includes a first portion that runs parallel with the first and second elongated portions of the resonant inductor and is located between the first and second elongated portions of the resonant inductor.

Layout for voltage-controlled oscillator (VCO)

The disclosure is directed to compensating for frequency drift in a voltage-controlled oscillator (VCO). Example methods and systems are described which may detect a signal edge associated with a transceiver, and determine whether one or more lock quality signals indicate that the VCO frequency is outside of an specified range, indicating an unacceptable amount of frequency drift. A frequency tuning setting of the VCO may be adjusted based on the one or more lock quality signals, and a determination may be made whether or not the one or more lock quality signals indicate that the VCO frequency has returned to the specified range. The adjustment of the frequency tuning setting of the VCO may be repeated until the VCO frequency returns to the specified range.

Closed loop bank selection for temperature compensation in wireless systems

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Belmont, CA, United States of America

Yido Koo