Massachusetts Institute of Technology

Nanyang Technological University

Yiding Lin

Jurgen Michel

Chuan Seng Tan

Eugene A Fitzgerald

Kwang Hong Lee

Shuyu Bao

Danhao Ma

Disclosed is a method of facilitating straining of a semiconductor element () for semiconductor fabrication. In a described embodiment, the method comprises: providing a base layer () with the semiconductor element () arranged on a first base portion () of the base layer (), the semiconductor element () being subjected to a strain relating to a characteristic of the first base portion (); and adjusting the characteristic of the first base portion () to facilitate straining of the semiconductor element ().

Method of facilitating straining of a semiconductor element for semiconductor fabrication, semiconductor platform obtained by the method, and optoelectronic device comprising the semiconductor platform

An integrated optical modulator array useful for modulating light at different wavelengths in the same optical band includes multiple GeSi waveguides on a substrate. Each GeSi waveguide has a different width and is coupled to electrodes to form an electro-absorption modulator. A stressor material, such as SiN, disposed between the GeSi waveguides in the optical modulators applies a strain to the GeSi waveguides. Because each GeSi waveguide has a different width, it experiences a different strain. This difference can be a difference in magnitude, type (homogeneous v. inhomogeneous, compressive v. tensile), or both. The different strains shift the bandgaps of the Ge in the GeSi waveguides by different amounts, shifting the optical absorption edges for the GeSi waveguides by different amounts. Put differently, the stressor layer strains each GeSi modulator differently, causing each GeSi modulator to operate at a different wavelength.

Strained germanium silicon optical modulator array including stress materials

A method of manufacturing a germanium-on-insulator substrate is disclosed, comprising: (i) doping a first portion of a germanium layer with a first dopant to form a first electrode, the germanium layer arranged with a first semiconductor substrate; (ii) forming at least one layer of dielectric material adjacent to the first electrode to obtain a combined substrate; (iii) bonding a second semiconductor substrate to the layer of dielectric material and removing the first semiconductor substrate from the combined substrate to expose a second portion of the germanium layer with misfit dislocations; (iv) removing the second portion of the germanium layer to enable removal of the misfit dislocations and to expose a third portion of the germanium layer; and (v) doping the third portion of the germanium layer with a second dopant to form a second electrode. The electrodes are separated from each other by the germanium layer, and the first dopant is different to the second dopant.

Method of manufacturing a germanium-on-insulator substrate

Growing community of inventors

Singapore, Singapore

Yiding Lin