Chinese Academy of Sciences

Beijing Bytedance Network Technology Co., Ltd.

Zhuzhou Crrc Times Electric Co., Ltd

Yidan Tang

Xinyu Liu

Yun Bai

Chengyue Yang

Shengkai Wang

Hong Yu Chen

Ruie Gao

Siqi Tan

Ye Lin

Guoyou Liu

Xiaoli Tian

Weiwei Qi

Chengzhan Li

Zhonglin Han

Huajun Shen

Jingtao Zhou

Shengxu Dong

Yixiang Zhang

This disclosure relates to a video processing method, a video processing apparatus, and a computer-readable storage medium. The video processing method includes: receiving an original caption added for a video to be translated by a creator of the video; selecting a translator based on the original caption and a language used by a user on a social network; providing the selected translator with the video to be translated, and providing, in the video, the translator with an interactive interface for translating the original caption in the video; receiving a caption translation of the caption returned by the translator from the interactive page; and displaying, in the video, the caption translation passing assessment.

Video processing method, video processing apparatus, and computer-readable storage medium

The present disclosure discloses a semiconductor device and a preparation method thereof. The semiconductor device includes: an N+ substrate, a plurality of openings opening toward a back surface formed in the N+ substrate; an N&#x2212; epitaxial layer formed on the N+ substrate, the N&#x2212; epitaxial layer including: an active area epitaxial layer including a plurality of P++ area rings and a plurality of groove structures, wherein single groove structure is formed on single P++ area ring; a terminal area epitaxial layer including an N+ field stop ring and a plurality of P+ guard rings; a Schottky contact formed on the active area epitaxial layer, a passivation layer formed on the terminal area epitaxial layer, and ohmic contacts formed on the back surface of the N+ substrate and in the plurality of openings.

Semiconductor device and preparation method thereof

A method of manufacturing a grooved-gate MOSFET device based on a two-step microwave plasma oxidation, including: etching a grooved gate, and oxidizing silicon carbide on a surface of the grooved gate to silicon dioxide by microwave plasma to form a grooved-gate oxide layer, the step of forming the grooved-gate oxide layer including: placing a silicon carbide substrate subjected to the grooved gate etching in a microwave plasma generating device; introducing a first oxygen-containing gas, heating generated oxygen plasma to a first temperature at a first heating rate, and performing low-temperature plasma oxidation at the first temperature and a first pressure; heating the oxygen plasma to a second temperature at a second heating rate, introducing a second oxygen-containing gas, and performing high-temperature plasma oxidation at the second temperature and a second pressure until a predetermined thickness of silicon dioxide is formed; stopping introduction of the oxygen-containing gas, and completing the reaction.

Method for manufacturing grooved MOSFET device based on two-step microwave plasma oxidation

A microwave plasma equipment and a method of exciting plasma are disclosed. The microwave plasma equipment includes: a plasma reaction device having a cavity in which a base support and a plasma-forming area is provided; a conversion device having gradient electrodes, the gradient electrodes being disposed inside the cavity and configured to generate a gradient electric field in the plasma-forming area; a gas supply device configured to introduce gas into the cavity of the plasma reaction device; and a microwave generating device configured to generate and transmit microwave into the cavity of the plasma reaction device.

Microwave plasma equipment and method of exciting plasma

A microwave plasma generating device for plasma oxidation of SiC, comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity. Each resonant cavity includes a cylindrical cavity. A micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity, a diameter of each of the micro-holes is an odd multiple of wavelength, and an inner wall of the cylindrical cavity has a metal micro-nano structure, the metal micro-nano structure has a periodic dimension of &#x3bb;/n, where &#x3bb; is wavelength of an incident wave, and n is refractive index of material of the resonant cavity. The outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity, and the oxygen-containing gas forms an oxygen plasma around the resonant cavities for oxidizing SiC; a stage is disposed under the resonant cavities.

Microwave plasma generating device for plasma oxidation of SiC

A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including: step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device; step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage; step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue; step four, stopping the introduction of oxygen-containing gas and the reaction completely.

Method for oxidizing a silicon carbide based on microwave plasma at an AC voltage

The present disclosure discloses a self-aligned silicon carbide MOSFET device with an optimized Pregion and a manufacturing method thereof. The self-aligned silicon carbide MOSFET device is formed by a plurality of silicon carbide MOSFET device cells connected in parallel, and these silicon carbide MOSFET device cells are arranged evenly. The silicon carbide MOSFET device cell comprises two source electrodes, one gate electrode, one gate oxide layer, two Nsource regions, two Pcontact regions, two P wells, one Ndrift layer, one buffer layer, one Nsubstrate, one drain electrode and one isolation dielectric layer. By optimizing the Pregion, the present disclosure forms a good source ohmic contact, reduces the on-resistance, and also shorts the source electrode and the P well to prevent the parasitic transistor effect of the parasitic NPN and PiN, which may take both conduction characteristics and the breakdown characteristics of the device into consideration, and may be applied to a high voltage, high frequency silicon carbide MOSFET device. The self-aligned manufacturing method used in the present disclosure simplifies the process, controls a size of a channel accurately, and may produce a lateral and vertical power MOSFET.

Silicon carbide MOSFET device and method for manufacturing the same

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Beijing, China

Yidan Tang