Southern University of Science and Technology

Yida Li

Guobiao Zhang

Hongyu Yu

Yuejin Guo

Shengming Zhou

Kai Chen

Wang Zhang

Jun Lan

Guoxing Zhang

Xiaodong Xiang

Guangzhao Liu

Mingtao Hu

Mei Shen

A method for making a three-dimensional (3-D) module includes the steps of: A) forming a laminate of alternate ceramic tape layers and internal electrode layers on a substrate; B) etching said laminate to form first and second capacitor stacks at said first and second locations; C) firing said first and second capacitor stacks integrally; D) forming first and second pairs of external electrodes on said first and second capacitor stacks, respectively.

Methods for making three-dimensional module

The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.

Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)

Growing community of inventors

Shenzhen, China

Yida Li