Rutgers, the State University of New Jersey

US Government As Represented by the Secretary of the Army

Other

University of Medicine and Dentistry of New Jersey

Yicheng Lu

Nuri William Emanetoglu

Arthur D Ballato

Chieh-Jen Ku

John A Kosinski

Pavel Ivanoff Reyes

Richard H Wittstruck

Sriram Muthukumar

Mitra Dutta

Paul H Shen

Jagadeesh Pamulapati

Shaohua Liang

Wen-Chiang Hong

Zheng Zhang

Yang Zhang

Haifeng Sheng

Jian Zhong

Xiaojun Tong

Masayori Inouye

Michael Wraback

Ki-Bum Lee

Yonghui Zhang

Chandrasekhar R Gorla

Hongen Shen

Oleg Mirochnitchenko

Kristin Dana

Gabriela Livescu

Xiaolong Du

Aniruddh Solanki

Zengxia Mei

Steven Zheng

Jiahua Zhu

Keyang Yang

Aurelien Du Pasquier

Hanhong Chen

Nada N Boustany

Guangyuan Li

Xilin Zhao

Yifan Wu

Kuang Sheng

Ying Chen

Robert Pastore

Rui Li

Andrew Zheng

This document discloses a hybrid and multifunctional biosensing technology consisting of a dual gate thin-film transistor (DGTFT) biosensor with an extended gate covered with magnesium zinc oxide nanostructures (MZO) and an MZOmodified bulk acoustic wave resonator (MZOBAW). The technology is used for the full-scale dynamic monitoring of bacterial biofilm formation from its early stage to the maturation stage.

Full-scale dynamic detection of bacterial biofilm formation using MGZNO nanostructure modified multifunctional sensors

Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 &#x3bc;A, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.

Oxide-based flexible high voltage thin film transistor

A magnesium zinc oxide (MZO) nanostructure modified quartz crystal microbalance (MZO-QCM) takes advantage of the unique sensing ability and biocompatibility of MZO-based nanostructures, and combines them with the dynamic impedance spectrum capability of the bulk acoustic wave (BAW) devices including QCM, to form a real-time, noninvasive and label-free cell monitoring biosensor, specifically detecting the susceptibility and resistance of bacterial and fungal strains and cancer cells to various antibiotic and antifungal drugs and anticancer drugs, respectively.

Magnesium zinc oxide nanostructure modified biosensor and monitoring of response of cell population to an agent using the same

Magnesium Zinc Oxide (MZO)&#x2014;based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.

Magnesium zinc oxide-based high voltage thin film transistor

A ZnO based display pixel structure that includes system-on-glass (SOG) substrates with embedded non-volatile resistive random access memory iNV-RRAM) is provided. Such pixels feature high frame rates and low power consumption. The entire SOG is based on ZnO devices. Different devices including TFT, TCO, RRAM, inverters, and shift registers are obtained through doping of different elements into selected ZnO active regions. This reduces the cost to package control circuitry onto a backplane of a display system, resulting in a low cost, light weight and uUra-thin display.

ZnO-based system on glass (SOG) for advanced displays

A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

Multifunctional zinc oxide nano-structure-based circuit building blocks for re-configurable electronics and optoelectronics

This application discloses ZnO film transistor-based immunosensors (ZnO-bioTFT), 2T biosensor arrays formed from two integrated ZnO-bioTFTs, 1T1R-based nonvolatile memory (NVM) arrays formed from ZnO-bioTFT (T) integrated with ZnO-based resistive switches (R), as well as integrated bioTFT (IBTFT) sensor systems formed from 2T biosensor arrays and 1T1R NVM arrays. Through biofunctionalization, these biosensors can perform immunosensing with high sensitivity and selectivity, and therefore have a wide range of applications, for example, in detecting target biomolecules or small molecules, and potential application in cancer diagnosis and treatment.

Zinc oxide-based thin film transistor biosensors with high sensitivity and selectivity

A substrate-supported photoelectrode, which includes an essentially two-dimensional transparent conductive oxide (TCO) film supported by a substrate, wherein the film is doped with at least one element of Group III, and one or more single crystal essentially one-dimensional nanostructures that are integral with the film and grown upwardly therefrom without a boundary layer therebetween, wherein the film and the nanostructures are essentially identical in composition and include zinc oxide or a zinc oxide alloy. Methods for preparing the substrate-supported photoelectrode and solar cells incorporating the substrate-supported photoelectrode are also provided.

Zinc oxide photoelectrodes and methods of fabrication

A dynamic and noninvasive method of monitoring the adhesion and proliferation of biological cells through multimode operation (acoustic and optical) using a ZnO nanostructure-modified quartz crystal microbalance (ZnO-QCM) biosensor is disclosed.

Zinc oxide-based nanostructure modified QCM for dynamic monitoring of cell adhesion and proliferation

The present invention provides the multifunctional biological and biochemical sensor technology based on the integration of ZnO nanotips with bulk acoustic wave (BAW) devices, particularly, quartz crystal microbalance (QCM) and thin film bulk acoustic wave resonator (TFBAR). ZnO nanotips provide giant effective surface area and strong bonding sites. Furthermore, the controllable wettability of ZnO nanostructured surface dramatically reduces the liquid consumption and enhances the sensitivity of the biosensor device.

Multifunctional biosensor based on ZnO nanostructures

A method and apparatus for creating and detecting an optically encoded document having a uniquely designed document verification indicator is disclosed. One embodiment includes applying a spatially varying Brewster angle pattern on a substrate. Another embodiment includes an apparatus for detecting the spatially varying Brewster angle pattern including a light source, a slit aperture, a polarizer, at least one parabolic mirror, and an image capturing device.

Method and apparatus for making and detecting a document verification indicator using optical pattern encryption

In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgZnO epitaxial films. The ZnO and MgZnO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgZnO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.

[object Object]

Thin film bulk acoustic wave sensors with coatings of biological and chemical materials, multiple electrode depositions and a piezo-active thin film transducer layer are hosted on a substrate. The thin film bulk acoustic wave sensor suite, or T-BASS, produces a low-voltage, IC-compliant thickness-directed electric field that is substantially uniform over a substantial portion of the active area of the BAW structure. The BAWs produced are essentially extensional plane waves propagating away from the substrate surface and having phase progression substantially oblique to the substrate surface. For BAW applications requiring sensing by an active layer, it would be most desirable to have an electrode structure that is both IC-compliant and can be energized from a low-voltage source of electrical energy. The thin film BAW sensors are compatible with IC fabrication and processing techniques, such as photolithography. Both single channel and multiple channel thin film bulk acoustic wave sensors are provided.

Thin film bulk acoustic wave sensor suite

An Interdigital Bulk Acoustic-Wave Transducer (IBAT) device is provided with pairs of exciting electrode fingers disposed sufficiently close together on the piezoelectric substrate and dielectric coating over the exciting electrode fingers to generate an IC-compatible voltage at relatively high electric field strength, resulting in a reduced region of excitation and uniform electric field strength distribution. The IBAT advantageously produces a lateral electric field substantially uniform over a substantial portion of the active BAW structure area, reducing, or virtually eliminating sharp voltage spikes, an electrical field produced by the low voltages resident on integrated circuit (IC) chips, usually of a magnitude of 10 volts, or lower, the planar electrode structure being compatible with IC processing techniques, such as photolithography and the BAWs produced thereby being essentially plane waves, with propagation away from, but with phase progression substantially parallel to, the substrate surface. Numerous IBAT structural arrangements are possible by advantageously over-coating the IBAT electrode finger stripes with an insulating dielectric in different configurations, and any possible configuration achieved through over-coating is considered to be within the contemplation of the devices and methods of the present invention. Interdigital bulk acoustic wave transducers and methods for exciting bulk acoustic waves with interdigital electrode fingers are also provided.

Lateral field excitation of bulk acoustic waves from an IC-compliant low voltage source

Growing community of inventors

East Brunswick, NJ, United States of America

Yicheng Lu