Changxin Memory Technologies, Inc.

Yicheng Gao

WeiBing Shang

Hangtian Ba

The present disclosure provides a memory and a memory system thereof, relating to the technical field of semiconductors. The memory includes: memory sections and a plurality of bit lines (BLs) corresponding to a same memory section; sense amplifiers electrically connected to the plurality of BLs in one-to-one correspondence, where two of the sense amplifiers corresponding to adjacent two of the BLs are located on two sides of the memory section; and a first error checking and correction (ECC) module and a second ECC module, where one of two adjacent sense amplifiers located on a same side of the memory section is electrically connected to the first ECC module, and the other one of the two adjacent sense amplifiers located on the same side of the memory section is electrically connected to the second ECC module.

Growing community of inventors

Hefei, China

Yicheng Gao