Peking University

Yichen Fang

Ru Huang

Yimao Cai

Zongwei Wang

Wenliang Bai

Yefan Liu

Shihui Yin

The present invention discloses an organic resistive random access memory and a preparation method thereof. The memory uses silicon as a substrate, and has a MIM capacitor structure having a vertical memory unit, where the MIM structure has a top electrode of Al, a bottom electrode of ITO, and an middle functional layer of parylene, wherein, a parylene layer as the functional layer is formed by performing deposition multiple times, where the deposition of AlOis performed once by ALD between each two deposition of parylene. A critical region which is in favor of forming a conductive channel could be formed by controlling the deposition area of AlO, and further control the electrical characteristics of the memory. Through the present invention, the cycle-to-cycle and device-to-device uniformity could be effectively improved, without changing the basic structure of the memory.

Organic resistive random access memory and a preparation method thereof

Embodiments of the present invention disclose a resistive memory and a method for fabricating the same. The resistive memory comprises a bottom electrode, a resistive layer and a top electrode. The resistive layer is located over the bottom electrode. The top electrode is located over the resistive layer. A conductive protrusion is provided on the bottom electrode. The conductive protrusion is embedded in the resistive layer, and has a top width smaller than a bottom width. Embodiments of the present invention further disclose a method for fabricating a resistive memory. According to the resistive memory and the method for fabricating the same provided by the embodiments of the present invention, by means of providing the conductive protrusion on the bottom electrode, a 'lightning rod' effect may be occurred so that an electric field in the resistive layer is intensively distributed near the conductive protrusion. This significantly increases the possibility of generation of a conductive filament at the conductive protrusion, so that the conductive filament is not randomly formed. Thus, the stability of various parameters of the resistive memory is ensured, and thus the reliability and stability of the operation of the resistive memory are dramatically increased.

Resistive memory and method for fabricating the same

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Beijing, China

Yichen Fang