Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Yiannakis Manoli

Wilfried Mokwa

Gunther Zimmer

Michael Kandler

Jorg Eichholz

A process for manufacturing an integratable capacitative pressure sensor includes the following steps, starting from a semiconductor substrate (1): application of a guard film (2), precipitation of a polycrystalline semiconductor film (4), doping the polycrystalline semiconductor film (4) and removal of the guard film (2) by etching; then insulating the semiconductor zone (7) from the semiconductor substrate (1), and applying an insulator film (8) on the insulated semiconductor zone (7). The pressure sensor product, which is compatible with CMOS circuits and has increased sensor accuracy, includes a semiconductor zone (7) insulated from the semiconductor substrate (1) and an insulator film (8) applied on the insulated semiconductor zone (7), the polycrystalline semiconductor film (4) being located on the insulator film (8) above the insulated semiconductor zone (7).

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Mulheim, Germany

Yiannakis Manoli