Xiamen San'an Optoelectronics Co., Ltd

Yian Lu

Duxiang Wang

Chun-Yi Wu

Cheng Meng

A light-emitting diode includes a light-emitting epitaxial laminated layer with an upper surface; an ohmic contact layer over the light-emitting epitaxial laminated layer; an expanding electrode over the ohmic contact layer; a transparent insulating layer that covers the expanding electrode and the exposed ohmic contact layer, having a hole through the transparent insulating layer in a position corresponding to the expanding electrode; and a welding wire electrode over the transparent insulating layer and coupled to the expanding electrode via the hole.

Light emitting diode and fabrication method thereof

A light-emitting diode includes a light-emitting epitaxial laminated layer with an upper surface including an ohmic contact region and a non-ohmic contact region; an ohmic contact layer in the ohmic contact region; an expanding electrode over the ohmic contact layer, at least a part of which contacts with the upper surface of the light-emitting epitaxial laminated layer; a transparent insulating layer that covers the expanding electrode, the exposed ohmic contact layer and the upper surface of the light-emitting epitaxial laminated layer, having a current channel connected to the expanding electrode; a welding wire electrode over the transparent insulating layer, which connects to the expanding electrode via a current channel; when current is input, current quickly flows to the ohmic contact region along the current channel under the welding wire electrode, so that no current is input to the active layer under the welding wire electrode for lighting.

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Xiamen, China

Yian Lu