Elenion Technologies, LLC

Coriant Advanced Technology, LLC

Nokia Solutions and Networks Oy

Yi Zhang

Michael J Hochberg

Thomas Wetteland Baehr-Jones

Shuyu Yang

Ari Jason Novack

Yang Liu

Yangjin Ma

Ruizhi Shi

Kishore Padmaraju

Saeed Fathololoumi

Tom Baehr-Jones

An optical device that includes means for thermal stabilization and control is described. The optical device can be a ring resonator, or another device that requires accurate control of the phase of the optical signal. In an example involving an optical resonator, a thermal stabilization system includes a temperature sensor, a control circuit, and a heater local to the resonator. The temperature sensor can be a bandgap temperature sensor formed of a pair of matched p/n junctions biased in operation at different junction currents.

Photonic integrated circuit incorporating a bandgap temperature sensor

A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28&#xb1;0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 &#x3bc;m&#xd7;2 &#x3bc;m, orders of magnitude smaller than MMI and directional couplers.

Compact and low loss Y-junction for submicron silicon waveguide

A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at &#x2212;4 V reverse bias. 3-dB bandwidth is 30 GHz.

Germanium metal-contact-free near-IR photodetector

Metal-contact-free photodetector

A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.

Lateral avalanche photodetector

A hybrid single or multi-wavelength laser using an optical gain element, such as a semiconductor optical amplifier (SOA), for example a QD RSOA, and a semiconductor, e.g. silicon, photonics chip is demonstrated. A plurality, e.g. four, lasing modes at a predetermined, e.g. 2 nm, spacing and less than 3 dB power non-uniformity may be observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.

Semiconductor laser

A hybrid external cavity multi-wavelength laser using a QD RSOA and a silicon photonics chip is demonstrated. Four lasing modes at 2 nm spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.

Growing community of inventors

Jersey City, NJ, United States of America

Yi Zhang