Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Yi Yeol Lyu

Jin Heong Yim

Kwang Hee Lee

Sang Yoon Lee

Bon Won Koo

Ki Yong Song

Young Hun Byun

Sang Kook Mah

Joon Sung Ryu

Eun Ju Nah

Il Sun Hwang

Hyun Dam Jeong

Jong Jin Park

Sang Kyun Lee

Tae Woo Lee

Sun Jin Song

Jong Kug Seon

Seok Mo Chang

Chul Ho Jeong

Jae Geun Park

Ji Man Kim

Jin Gyu Lee

Jung Hyung Kim

Hyeon Jin Shin

Xavier Bulliard

Jung Yoon Kim

Hyun Jun Jeong

Yun Hyuk Choi

In Koo Kang

Keun Byoung Yoon

Eun Mi Seo

Ji Hun Rhee

Bon Won 106/903 Dongsuwon Lg Village Koo

Disclosed herein is a protective film. The protective film is produced by alternate coating of a polysilazane-based polymer and a flexible polysiloxane-based polymer. The polysilazane-based polymer is cured at low temperature to form silica, thereby achieving high hardness and high light transmittance. The protective film has improved interfacial adhesion between the respective coating films, which prevents permeation of moisture and oxygen. In addition, the protective film can be easily produced by low-temperature wet processes. Also disclosed herein is an encapsulation material comprising the protective film.

Protective film and encapsulation material comprising the same

Disclosed is a compound having a photocurable urethane (meth)acrylate group, its manufacturing method, and a photocurable composition including the compound. The compound is represented by Chemical Formulae 1 to 6. Each of Chemical Formulae 1 to 6 includes a urethane (meth)acrylate group represented by Chemical Formula 1-1 or 1-2.

Photocurable compound

Disclosed is an adhesive composition including a compound having a multi-functional urethane (meth)acrylate group and an adhesive film prepared by using it. The adhesive composition includes compounds represented by Chemical Formulae 1 to 3. The compound represented by Chemical Formulae 1 to 3 includes an urethane (meth)acrylate group represented by the Chemical Formula 1-1 or 1-2.

Adhesive composition and adhesive film made therefrom

Disclosed are a composition comprising a mixture of at least one iridium organometallic compound and an electrically conductive polymer, an organic active layer comprising the same, an organic memory device comprising the organic active layer and methods for fabricating the same. The organic memory device may include a first electrode, a second electrode and the organic active layer between the first and second electrodes. The organic memory device possesses the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs, increased reliability and improved non-volatility.

Organic memory device using iridium organometallic compound and fabrication method thereof

A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and I/Iratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.

Composition for preparing organic insulator

A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

Method of fabricating thin film transistor

A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Siloxane-based resin and a semiconductor interlayer insulating film using the same

The present invention provides a composition for preparing porous dielectric thin films containing pore-generating material, said composition comprising gemini detergent, and/or a quaternary alkyl ammonium salt, a thermo-stable organic or inorganic matrix precursor, and solvent for dissolving the two solid components. There is also provided an interlayer insulating film having good mechanical properties such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.

Composition for preparing porous dielectric thin films

A composition for preparing a porous interlayer dielectric thin film which includes a saccharide or saccharide derivative, a thermo-stable organic or inorganic matrix precursor, and a solvent for dissolving the two solid components. Also provided is a dielectric thin film having evenly distributed nano-pores with a diameter of less than 50 &#x212b;, which is required for semiconductor devices.

Composition for preparing porous dielectric thin film containing saccharides porogen

Disclosed herein are a novel gemini surfactant and a method for preparing a mesoporous material using the gemini surfactant. The method for preparing a mesoporous material uses the novel gemini surfactant as a structure-directing agent to provide a mesoporous material has a pore size of 10 nm or less with uniform pore size distribution.

Gemini surfactants and methods for preparing mesoporous materials using the same

A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.

Siloxane-based resin and interlayer insulating film formed using the same

Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.

Growing community of inventors

Daejeon-Shi, South Korea

Yi Yeol Lyu