Applied Materials, Inc.

Google Inc.

Samsung Electronics Co., Ltd.

Vmware, Inc.

Netapp, Inc.

Cisco Technology, Inc.

Yi Yang

Carlos M Pignataro

Boon Loong Ng

Nagendra Kumar Nainar

Aykut Aydin

Rui Cheng

Tuan Anh Nguyen

Hyunchul Kim

Karthik Janakiraman

Diwakar N Kedlaya

Krishna Nittala

Zubin Huang

Pavan Edara

Reuven Lax

Shoji Ogura

Nicolas Crowell

Gurpreet Singh Nanda

Sanjeev Baluja

Moonseok Kang

Joseph F AuBuchon

Yuming Zhu

Dimitra Papachristou

Joo Hyun Bae

Tengwen Hu

Yiwen Mu

Neesha Subramaniam

Truong Van Nguyen

Gabe Culbertson

Kathryn Malia Tice

Edward Santos

Prashant Baheti

Chériana Crystal Gretchen Griggs

Pierce Anthony Vollucci

Sam Becker

Rick Maria Frederikus Van Mook

Tsutomu Ohkura

Rithin Kumar Shetty

Venkata Sharat Chandra Parimi

Mansi Shah

Badri N Ramamurthi

Nitin Pathak

Andrew Eric Dunn

Deepak Kumar

Ojan Thornycroft

Gautam K Hemani

Nattaworn Boss Nunta

Vishnu Rajula

Steffanie Lee McBrian

Steffanie Lee Mcbrian

Wei Peng

Manjunath Veerappa Chobari Patil

Matthew Linkous

Aditya Vinod Padaki

Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for generating video anchors for a video. In one aspect, a method includes obtaining key moment identifiers for a video, where each key moment identifier includes a time index value specifying a playback time in the video, and is indicative subject matter of the video that has been determined to meet one or more interest criteria that define salient topics within the video. For each key moment identifier, a video anchor is generated, where each video anchor indicates a playback time for the video, and may include an image of a frame that occurs near the playback time. Upon a selection of the video anchor by the user, an instruction in the video anchor causes a video player to begin playback of the video at the playback time specified by the video anchor.

Video timed anchors

Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

Methods to eliminate of deposition on wafer bevel and backside

Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the Hmay be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the Hmay be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

Boron concentration tunability in boron-silicon films

Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

Methods to reduce material surface roughness

A method for processing data exactly once using transactional stream writes includes receiving, from a client, a batch of data blocks for storage on memory hardware in communication with the data processing hardware. The batch of data blocks is associated with a corresponding sequence number and represents a number of rows of a table stored on the memory hardware. The method also includes partitioning the batch of data blocks into a plurality of sub-batches of data blocks. For each sub-batch of data blocks, the method further includes assigning the sub-batch of data blocks to a buffered stream; writing, using the assigned buffered stream, the sub-batch of data blocks to the memory hardware; updating a storage log with an intent to commit the sub-batch of data blocks using the assigned buffered stream; and committing the sub-batch of data blocks to the memory hardware.

Scalable exactly-once data processing using transactional streaming writes

One or more techniques and/or computing devices are provided for non-disruptively establishing a synchronous replication relationship between a primary volume and a secondary volume and/or for resynchronizing the primary volume and the secondary volume. For example, a baseline snapshot and one or more incremental snapshots of the primary volume are used to construct and incrementally update the secondary volume with data from the primary volume. A dirty region log is used to track modifications to the primary volume. A splitter object is used to split client write requests to the primary volume and to the secondary volume. A synchronous transfer engine session is initiated to processing incoming client write requests using the dirty region log. A cutover scanner is used to transfer dirty data from the primary volume to the secondary volume. In this way, a synchronous replication relationship is established between the primary volume and the secondary volume.

Non-disruptive baseline and resynchronization of a synchronous replication relationship

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

Amorphous silicon-based films resistant to crystallization

Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, are provided, for generating video anchors for a video. In one aspect, a method includes obtaining key moment identifiers for a video, where each key moment identifier includes a time index value specifying a playback time in the video, and is indicative subject matter of the video that has been determined to meet one or more interest criteria that define salient topics within the video. For each key moment identifier, a video anchor is generated, where each video anchor indicates a playback time for the video, and may include an image of a frame that occurs near the playback time. Upon a selection of the video anchor by the user, an instruction in the video anchor causes a video player to begin playback of the video at the playback time specified by the video anchor.

Techniques for predicting the outcome of a storage management operation on a hyper-converged infrastructure (HCI) deployment are provided. In one set of embodiments, a computer system can retrieve a current storage resource state of the HCI deployment. The computer system can then execute a simulation of the storage management operation in view of the current storage resource state, where the executing includes performing one or more simulated data movements between one or more host systems in the HCI deployment. Upon completing the simulation, the computer system can generate a report including, among other things, a predicted result status of the storage management operation based on the simulation.

Hyper-converged infrastructure (HCI) operation predictor

In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate, a central opening in fluid communication with the central gas channel, and a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.

Deposition radial and edge profile tunability through independent control of TEOS flow

A method for managing metadata for a transactional storage system include receiving a query request at a snapshot timestamp. The query request requests return of at least one data block from a plurality of data blocks. Each data block includes a corresponding write epoch timestamp and a corresponding conversion indicator indicating whether the data block is active or has been converted at a respective conversion timestamp. The method also includes setting a read epoch timestamp equal to the earliest one of the write epoch and determining whether any of the respective conversion timestamps occurring at or before the snapshot timestamp occur after the read epoch timestamp. The method also includes determining the at least one data block requested by the query request by scanning each of the data blocks including corresponding write epoch timestamps occurring at or after the read epoch timestamp.

Metadata management for a transactional storage system

Display screen or portion thereof with graphical user interface

Growing community of inventors

San Jose, CA, United States of America

Yi Yang