Au Optronics Corporation

Yi-Ya Tseng

Han-Tu Lin

Ya-Hui Peng

Chih-Hsien Chen

Kun-Fu Huang

A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 10atoms/cmand 10atoms/cm. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.

Growing community of inventors

Hsin-Chu, Taiwan

Yi-Ya Tseng