Taiwan Semiconductor Manufacturing Comp. Ltd.

Purdue Research Foundation

Yi Xuan

James Fiorenza

Zhiyuan Cheng

Bunmi T Adekore

Peide Ye

Yanqing Wu

Minghao Qi

Kyunghun Han

Sangsik Kim

Ben Niu

Yun Jo Lee

Min Teng

Justin Christopher Wirth

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device are disclosed. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

INP-based transistor fabrication

A semiconductor photonic device includes a substrate, facet(s), and optical coupler(s) associated with the facet(s). Each optical coupler can couple an electromagnetic field incident on the respective facet towards the substrate as the electromagnetic field proceeds into the semiconductor photonic device. In some examples, each coupler has waveguides extending in a longitudinal direction and at least partly encapsulated within corresponding cladding layers. A first waveguide extends farther from the facet in the longitudinal direction than does a second waveguide. The second waveguide is located farther above the silicon substrate than is the first waveguide. The coupler can include a stack of waveguide assemblies. A lower waveguide assembly can include one waveguide. An intermediate or upper waveguide assembly can include multiple waveguides. In some examples, at least one waveguide tapers along its length.

Optical coupler

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

InP-based transistor fabrication

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West Lafayette, IN, United States of America

Yi Xuan