International Business Machines Corporation

Chinese Academy of Sciences

Yi Xin Song

Miao Liu

Qiuxia Xu

Tian Ming Pan

Cheng Luo

Huajie Zhou

Wen Guo

Chu Yun Tong

Al Chakra

Xiao Liang Hu

Peng Fei Tian

Bo Chen Zhu

Yang Zhang

Zhen Yang Shi

Xiao Ming Hu

Fu Li Bian

Bing Qian

Yu Kun Wei

A system may port a data model into a strict schema system, translate the data model into a transformation rule definition, fit the transformation rule definition to a transform action, receive strict schema data, perform the transform action on the strict schema data based on the transformation rule definition to form rough data, and execute filtering and enriching operations on the rough data to form loose schema data.

Transforming data of strict schema structure database

A computer-implemented method includes analyzing, by a processing unit, a relational database to discover a plurality of static relationships between a plurality of data fields captured in two or more tables. The processing unit can discover a plurality of entity relationships based on observing application-generated queries and results of accessing the relational database in response to one or more test triggers. The processing unit can build one or more relation graphs based on the static relationships and the entity relationships to link a plurality of nodes with one or more edges that define at least one relationship between the nodes. One or more class graphs are formed having a reduced number of edges than the one or more relation graphs. The processing unit can generate one or more result data graphs using the one or more class graphs as a graph database model of the relational database.

Extraction of relationship graphs from relational databases

Embodiments include cognitive control of runtime resource monitoring scope. Aspects include obtaining historical data for each of a plurality of metrics for a computer system and calculating, based on the historical data, an anomaly relationship score for each of the plurality of metrics. Aspects also include calculating, based on the historical data, a sensitivity score for each of the plurality of metrics and determining a priority score for each of the plurality of metrics based upon a weighted combination of the anomaly relationship score and the priority score. Aspects further include receiving real-time data for each of the plurality of metrics and presenting a subset of the real-time data to a user, the subset created by selecting one or more of the plurality of metrics based on the priority score of each of the plurality of metrics.

Cognitive control of runtime resource monitoring scope

A computer-implanted method for creating a filtered digital entry includes generating, via a processor implementing a trace generation engine, a trace indicative of successful transactions and erroneous transactions. The processor instantiates a plurality of buffers in a buffer pool each configured to record a trace function boundary. The processor then analyzes each buffer in the buffer pool based on the trace function boundary to evaluate whether each function entry in the trace contains an erroneous transaction. If the processor determines that a function entry contains an erroneous transaction, the processor sets an output flag in a call stack map associated with that function. The processor then generates a filtered digital entry based on the call stack map. The filtered digital entry includes only erroneous transaction data from the trace.

Filter trace based on function level

The present application discloses a method for manufacturing a gate-all-around field effect transistor, comprising the steps of: forming a suspended fin in a semiconductor substrate; forming a gate stack around the fin; and forming source/drain regions in the fin on both sides of the gate stack, wherein an isolation dielectric layer is formed in a portion of the semiconductor substrate which is adjacent to bottom of both the fin and the gate stack. The present invention relates to a method for manufacturing a gate-all-around device on a bulk silicon substrate, which suppress a self-heating effect and a floating-body effect of the SOI substrate, and lower a manufacture cost. The inventive method is a conventional top-down process with respect to a reference plane, which can be implemented as a simple manufacture process, and is easy to be integrated into and compatible with a planar CMOS process. The inventive method suppresses a short channel effect and promotes miniaturization of MOSFETs.

Method for manufacturing suspended fin and gate-all-around field effect transistor

A method for manufacturing a bulk Si nanometer surrounding-gate MOSFET based on a quasi-planar process, including: local oxidation isolation or shallow trench isolation; depositing buffer SiOoxide layer/SiN dielectric layer on the bulk Si; electron beam exposure; etching two adjacent slots; depositing SiN sidewalls; isotropically etching Si; dry oxidation; removing SiN by wet etching; forming the nanowire by stress self-constraint oxidation; depositing and anisotropically etching oxide dielectric layer and planarizing surface; releasing the nanowire by wet etching while keeping sufficiently thick SiOat bottom as isolation; growing gate dielectric and depositing gate material; etching back the gate and isotropically etching the gate material by using the gate dielectric as a block layer; shallow implantation in the source/drain region; depositing and etching sidewalls; deep implantation in the source/drain region to form contact. The present invention eliminates self-heating effect and floating-body effect, and is easy to integrate. The present invention is also advantageous in suppression of short channel effect and enables the size of the MOSFET to be smaller.

Method for manufacturing a MOSFET with a surrounding gate of bulk Si

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Beijing, China

Yi Xin Song