Hermes Microvision Inc.

Hermes Microvision, Inc. (taiwan)

Yi Xiang Wang

Zhongwei Chen

Jack Jau

Joe Wang

Chung-Shih Pan

Juying Dou

Jian Zhang

Weiming Ren

Xuedong Liu

Wei Fang

Zhong-wei Chen

Hong Xiao

Kenichi Kanai

Van-Duc Nguyen

Jay Jianhui Chen

Zheng Fan

Anil A Desai

Edward Tseng

Jun Jiang

Guofan Ye

Qingyu Meng

An apparatus for increasing electric conductivity to a wafer substrate when exposures to electron beam irradiation is disclosed. More specifically, a more free mechanical contact between a wafer and electric contact pins (within an electrostatic chuck) is provided to significantly reduce the scratch and damage on the wafer backside.

Apparatus for increasing electric conductivity to a semiconductor wafer substrate when exposure to electron beam

An apparatus comprises an imaging unit to image a wafer to be reviewed, wherein imaging unit is the modified SORIL column. The modified SORIL column includes a focusing sub-system to do micro-focusing due to a wafer surface topology, wherein the focusing sub-system verifies the position of a grating image reflecting from the wafer surface to adjust the focus; and a surface charge control to regulate the charge accumulation due to electron irradiation during the review process, wherein the gaseous molecules are injected under a flood gun beam rather than under a primary beam. The modified SORIL column further includes a storage unit for storing wafer design database; and a host computer to manage defect locating, defect sampling, and defect classifying, wherein the host computer and storage unit are linked by high speed network.

E-beam defect review system

An apparatus for increasing electric conductivity to a wafer substrate, when exposed to electron beam irradiation, is disclosed. More specifically, a methodology to breakdown the insulating layer on wafer backside is provided to significantly reduce the damage on the wafer backside while proceeding with the grounding process.

Wafer grounding methodology

The present invention relates to an operation stage of a charged particle beam apparatus which is employed in a scanning electron microscope for substrate (wafer) edge and backside defect inspection or defect review. However, it would be recognized that the invention has a much broader range of applicability. A system and method in accordance with the present invention provides an operation stage for substrate edge inspection or review. The inspection region includes top near edge, to bevel, apex, and bottom bevel. The operation stage includes a supporting stand, a z-stage, an X-Y stage, an electrostatic chuck, a pendulum stage and a rotation track. The pendulum stage mount with the electrostatic chuck has the ability to swing from 0&#xb0; to 180&#xb0; while performing substrate top bevel, apex and bottom bevel inspection or review. In order to keep the substrate in focus and avoid a large position shift during altering the substrate observation angle by rotation the pendulum stage, one embodiment of the present invention discloses a method such that the rotation axis of the pendulum stage consist of the tangent of upper edge of the substrate to be inspected. The electrostatic chuck of the present invention has a diameter smaller than which of the substrate to be inspected. During the inspection process the substrate on the electrostatic chuck may be rotated about the central axis on the electrostatic chuck to a desired position, this design insures all position on the bevel and apex are able to be inspected.

Operation stage for wafer edge inspection and review

A method and system for inspecting a semiconductor wafer. The method includes providing an illumination flux through a pattern plate and a lens to a surface of a specimen to project a pattern onto the surface of the specimen. The pattern is associated with the pattern plate. Additionally, the method includes detecting the illumination flux reflected from the surface of the specimen with a detector, processing information associated with the detected illumination flux, and generating a first image based on at least information associated with the detected illumination flux. The first image includes a first image part for the pattern and a second image part for the specimen. Moreover, the method includes adjusting the lens to a state in order to achieve a first predetermined quality for the first image part, and moving the specimen to a first position.

Optical auto focusing system and method for electron beam inspection tool

Method and apparatus for removing and neutralizing charges. The method includes loading a structure into a chamber. The structure includes a first surface and a plurality of charges away from the first surface. Additionally, the method includes supplying a first ionized gas to the first surface of the structure, and radiating the structure with a first ultraviolate light. The supplying a first ionized gas and the radiating the structure with a first ultraviolate light are performed simultaneously for a first period of time.

System and method for removing charges with enhanced efficiency

A method for inspecting a semiconductor wafer using an SEM having a nominal focal plane and operable for guiding a beam. The SEM having a stage movable in each of an X-, Y-, and Z-direction, including moving the SEM stage in the XY-direction to a first location for inspection, optically sensing the location of the top surface of an area in relation to the focal plane of the stage, adjusting the position of the stage in the Z-direction so that the top surface of the area is substantially at the focal plane, inspecting the areas, and moving the stage in the XY-direction to the next location such that the next area is under the SEM beam for inspection. The Z-stage using a non-contact optical sensor to provide feedback to drive a plurality of piezoelectric actuator to move the wafer to the focal plane.

Method and system of using a scanning electron microscope in semiconductor wafer inspection with Z-stage focus

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Fremont, CA, United States of America

Yi Xiang Wang