Lyvgen Biopharma Holdings Limited

Sandisk Technologies Inc.

Cccc National Engineering Research Center of Dredging Technology and Equipment Co., Ltd.

Lyvgen Biopharma Co., Ltd.

Lyvgen Biopharma (Suzhou) Co., Ltd.

Shanghai Svm Medical Technology Co., Ltd.

Yi Wu

Dong Wang

Jieyi Wang

Qing Xu

Junrong Yan

Xiaobo Huang

Jian Sun

Jinjing Zhang

Song Zhang

Bin Zhu

Zhonghua Qian

Hongsheng Zhang

Kailei Zhang

Yundai Chen

Qian Zhai

Keming Zhou

Yanxing He

Baoshi Han

Yuanquan Miao

Weihao Song

Jingdun Pang

Jiandong Zhou

Yun Long

Longxiang Su

Hongli He

Yunping Lan

Zujun Tang

Haoyu Yang

Haiquan Cao

Xiangde Zheng

Xinkang Wang

Sinan Sun

A method includes the step of thinning a semiconductor wafer by a horizontal stealth lasing process, and semiconductor wafers, dies and devices formed thereby. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by supporting an active surface of the wafer on a rotating chuck, and focusing a horizontally-oriented laser in multiple cycles at different radii within the rotating wafer. Upon completion of the multiple cycles, a portion of the wafer substrate may be removed, leaving the wafer thinned to its final thickness. Thereafter, a vertical stealth lasing process may be performed to cut individual semicondcutor dies from the thinned wafer.

Semiconductor wafer thinned by horizontal stealth lasing

A calculation method for measuring the flatness of cross-section of a tunnel segment, comprising: mounting laser displacement sensors on a thrust cylinder assembly plane of a tunnel boring machine, an emitting laser beam of each sensor being parallel to an axis of a cylinder, being perpendicular to the propulsion cylinder assembly plane, and pointing to the end surface of a segment ring to be tested; the intersection of the straight line where the laser of each laser displacement sensor is located and the propulsion cylinder assembly plane is referred to as a base point P; the intersection formed between the laser of each laser displacement sensor and said segment ring is referred to as a measurement point P'; the corresponding spatial coordinates of each base point are represented by P(x,y,z); the corresponding spatial coordinates of each measurement point are represented by P′(x′,y′,z′); a rear shield axis vector n=(x,y,z).

Calculation method for measuring flatness of cross-section of tunnel segment based on spatial point-to-plane relation

Disclosed herein are agnostic anti-CD40 antibodies and methods of using such for eliciting CD40 signaling, thereby enhancing immune responses, such as dendritic cell functions. The antibodies disclosed herein may be used to treat diseases, such as cancer and immune disorders.

Anti-CD40 antibodies and uses thereof

Disclosed herein are agonistic anti-CD137 antibodies and methods of using such for eliciting CD137 signaling, thereby enhancing immune responses such as T cell functions. The antibodies disclosed within may be used to treat diseases, such as cancer and immune disorders.

Anti-CD137 antibodies and uses thereof

Disclosed herein are humanized anti-CD137 antibodies and methods of using such for eliciting CD137 signaling, thereby enhancing immune responses such as T cell functions. The antibodies disclosed within may be used to treat diseases, such as cancer and immune disorders.

Humanized anti-CD137 antibodies and uses thereof

The disclosure provides CD40-binding molecules comprising engineered human IgG domains, for example, human IgG1, IgG2, and IgG4 variants having mutations in the hinge domain, which exhibit altered binding activity to one or more Fc&#x3b3; receptors. Also described herein are methods for selectively activating or inhibiting immune responses in a subject using the CD40-binding molecules.

Anti-CD40 antibody having engineered Fc domains and therapeutic uses thereof

Growing community of inventors

Shanghai, China

Yi Wu