Motorola Corporation

Texas Instruments Corporation

Symbol Technologies, LLC

Freescale Semiconductor,inc.

Cytec Technology Corporation

Google Inc.

Yi Wei

Robert M Wallace

Glen D Wilk

Bernard F Coll

Hao Li

Kenneth Andrew Dean

Ravindranath Droopad

John Mark Anthony

Albert Alec Talin

Papu D Maniar

Zhiyi Jimmy Yu

Yong Liang

Xiaoming Hu

Chenggang Xie

Matthew Stainer

Sunil V Hattangady

Steven M Smith

Adam Madison Rawlett

Alexandre A Baidak

Steven R Young

James Senger

John L Edwards, Jr

James Bradley Craigo

Keshu Zhang

Haifeng Li

Paul A Von Allmen

Jun J Wang

Daniel S Marshall

Shaoping Tang

Alexander A Demkov

Jeffrey H Baker

John J D'Urso

Andy E Hooper

Troy A Trottier

Dirk C Jordan

Diana J Convey

Ken Douros

Xiao M Hu

Li Hao

Thermoplastic polymer particles directly cross-linked together or cross-linked via a separate and independent polymer network to form an inter-penetrating network are disclosed herein, along with methods of manufacturing and use as interleaf tougheners of pre-pregs and composite articles.

Engineered cross-linked thermoplastic particles for interlaminar toughening

A touch-screen display apparatus, the apparatus may include first and second sheets having opposed major surfaces and a size and shape defined by a periphery. The periphery may be defined by opposed ends and opposed edges. The first and second sheets may each have a conductive pattern including a pair of opposed busbars and a plurality of traces electrically coupled to, and extending between, corresponding pairs of opposed busbars. The transparent force sensing (TFS) sheet may have opposed major surfaces and a variable resistance which is related to a force exerted upon one or more of its major surfaces. The TFS sheet may be situated between the first and second sheets. The apparatus may also include one or more separation portions situated between the TFS sheet and the first or second sheet to bias the TFS sheet apart from the first or second sheet.

Touch screen rendering system and method of operation thereof

A device () with a viewable surface () including a plurality of transparent pedestals () having a reflective material () disposed on its sides () make smudges forming thereon unnoticeable by taking advantage of optical characteristics including contrast and the user's visual acuity. The pedestals () generally have a width () of less than 50 microns, a height () equal to twice the width (), and a spacing () between adjacent pedestals () equal to the width (). The device () may be an electronic device, and more particularly a portable electronic device such as a cell phone.

Viewable surface having unnoticeable smudges

A transparent force sensor for use in touch panel displays (touch screens) and method for fabricating the same are disclosed. The transparent force sensor is capable of detecting touch by measuring local pressure applied by a touch input to a display area of the touch screen.

Transparent force sensor and method of fabrication

Systems and methods are provided for authenticating an input on a touch screen. A method comprises obtaining one or more pressure metrics for an input by a user on a touch screen that is being proffered as that of a known user. Each pressure metric corresponds to a pressure applied to the touch screen by the user at a respective impression location of the input. The method further comprises authenticating the user as the known user based at least in part on the one or more pressure metrics.

Systems and methods for pressure-based authentication of an input on a touch screen

Methods and apparatus are provided for manipulating content displayed on a touch screen utilizing a transparent pressure-sensing touch panel. A method comprises displaying content on the touch screen and obtaining one or more pressure metrics for an input gesture on the transparent pressure-sensing touch panel. Each pressure metric corresponds to pressure (or force) applied to the transparent pressure-sensing touch panel by a respective impression of the input gesture. The method further comprises adjusting the displayed content on the touch screen in response to the input gesture, wherein the displayed content is adjusted based on to the one or more pressure metrics for the input gesture.

Methods and apparatus for pressure-based manipulation of content on a touch screen

An emission device is provided for extracting electrons onto an anode of a visual display. The emission device () includes a conductivity limited material () positioned between first and second electrodes () and having a surface (). A plurality of catalytic nanoparticles () are distributed throughout the conductivity limited material (), wherein some of the catalytic particles () are contiguous to the surface (). A plurality of nanostructures (), such as carbon nanotubes, are grown from the catalytic nanoparticles () contiguous to the surface (). A voltage is applied across the conductivity limited material () having a plurality of catalytic particles () embedded therein, thereby causing the electrons to tunnel between the catalytic particles (). An anode () is spaced apart from the nanostructures () for extracting and receiving electrons emitted from the nanostructures () when a first potential is applied across the first and second electrodes () and a second potential is applied to the anode ().

Emitting device having electron emitting nanostructures and method of operation

A method is provided for forming a porous metal catalyst () on a substrate () for nanotube () growth in an emissive display. The method comprises depositing a metal () onto a surface of a substrate () at an angle (&#x398;) to the surface, depositing a metal catalyst () onto the metal (), and forming nanotubes () on the metal catalyst ().

Method of forming a porous metal catalyst on a substrate for nanotube growth

High quality epitaxial layers of monocrystalline oxide materials () can be grown overlying monocrystalline substrates () such as large silicon wafers. The monocrystalline oxide layer () comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer () of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.

Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process

A method for preparing a semiconductor substrate surface () for semiconductor device fabrication, includes providing a semiconductor substrate () having a pure Ge surface layer () or a Ge-containing surface layer (), such as SiGe. The semiconductor substrate () is cleaned using a first oxygen plasma process () to remove foreign matter () from the surface () of the substrate (). The substrate surface () is next immersed in a hydrochloric acid solution () to remove additional foreign matter () from the surface () of the substrate (). The immersion step is followed by a second oxygen plasma etch process (), passivate the surface with a passivation layer (), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.

Method for preparing a semiconductor substrate surface for semiconductor device fabrication

A field emission device and method of forming a field emission device are provided in accordance with the present invention. The field emission device is comprised of a substrate () having a deformation temperature that is less than about six hundred and fifty degrees Celsius and a nano-supported catalyst () formed on the substrate () that has active catalytic particles that are less than about five hundred nanometers. The field emission device is also comprised of a nanotube () that is catalytically formed in situ on the nano-supported catalyst (), which has a diameter that is less than about twenty nanometers.

Field emission display and methods of forming a field emission display

A method of forming a vacuum microelectronic device including steps of forming at least one electron emitter on a substrate, applying a first electric field to move a portion of the at least one electron emitter in a direction toward the first electric field, and maintaining the at least one electron emitter in the direction after removing the first electric field.

Method of making vacuum microelectronic device

High quality monocrystalline metal oxide layers are grown on a monocrystalline substrate such as a silicon wafer. The monocrystalline metal oxide is grown on the silicon substrate at a temperature low enough to prevent deleterious and simultaneous oxidation of the silicon substrate. After a layer of 1-3 monolayers of the monocrystalline oxide is grown, the growth is stopped and the crystal quality of that layer is improved by a higher temperature anneal. Following the anneal, the thickness of the layer can be increased by restarting the low temperature growth. An amorphous silicon oxide layer can be grown at the interface between the monocrystalline metal oxide layer and the silicon substrate after the thickness of the monocrystalline oxide reaches a few monolayers.

Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate

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Chandler, AZ, United States of America

Yi Wei