Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC China Company Limited

Yi-Tzu Chen

Hau-Tai Shieh

Hung-Jen Liao

Ching-Wei Wu

Chien-Yuan Chen

Hao-I Yang

Che-Ju Yeh

Geng-Cing Lin

Yu-Hao Hu

Cheng-Jen Chang

Cheng Hung Lee

Chung-Cheng Chou

Anjana Singh

Fu-An Wu

Tsung-yung Jonathan Chang

Bin-Hau Lo

Tsai-Hsin Lai

Chiting Cheng

Chi-Lin Liu

Jui-Che Tsai

He-Zhou Wan

XiuLi Yang

Pankaj Aggarwal

Shu-Hsuan Lin

Wei-jer Hsieh

Ling-Fang Hsu

C K Su

Yen-Huei Chen

Wei-Cheng Wu

Chia-Hao Hsu

Jui-Jen Wu

Wei Min Chan

Hong-Chen Cheng

Chia-Wei Su

Ming-Zhang Kuo

Chien-Kuo Su

Pey-Huey Chen

Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.

Sub-word line driver placement for memory device

A memory circuit includes a NAND logic gate configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The memory circuit further includes a first P-type transistor coupled to the NAND logic gate, and configured to receive a first clock signal. The memory circuit further includes a first N-type transistor coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The memory circuit further includes a first latch coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.

Memory circuit and method of operating the same

A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.

Power mode wake-up for memory on different power domains

A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.

FinFET semiconductor device grouping

A memory circuit includes a NAND logic gate configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The memory circuit further includes a first N-type transistor coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The memory circuit further includes a second N-type transistor coupled to the first N-type transistor and a reference voltage supply, and configured to receive a first clock signal. The memory circuit further includes a first latch coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.

Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. A control circuit includes a first transistor, an inverter coupled to the first transistor, and a second transistor comprising a gate, a first source/drain terminal and a second source/drain terminal. The second transistor is coupled to the inverter. The first source/drain terminal of the second transistor is coupled in series to the first transistor. The second source/drain terminal is coupled to a decoder driver circuit. The second transistor is configured to charge a load of a common decoder line so as to reduce an effective load of the decoder driver circuit.

Word line pulse width control circuit in static random access memory

A memory circuit includes a NAND logic gate, a first N-type transistor, a second N-type transistor, a first inverter and a first latch. The NAND logic gate is configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The first N-type transistor is coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The second N-type transistor is coupled to the first N-type transistor and a reference voltage supply, and configured to receive a first clock signal. The first inverter is coupled to the NAND logic gate, and configured to output a data signal inverted from the first signal. The first latch is coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.

Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. An inverter within a pre-decoder circuit receives a first input of a clocked address. The inverter determines an output based on the clocked address. An electrical load of a decoder driver circuit of the SRAM device is modified based on the output. Current to a transistor coupled at a common node is provided. The transistor is configured to electrically couple a plurality of transistors of the decoder driver circuit within the SRAM device.

Growing community of inventors

Hsinchu, Taiwan

Yi-Tzu Chen