Industrial Technology Research Institute

Yi-Tsuo Wu

Jyh-Shyang Wang

Nikolai A Maleev

Kun-Fong Lin

Daniil Alexandrovich Livshits

Alexey R Kovsh

Alexey V Sakharov

A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.

VCSEL and the fabrication method of the same

The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlGaAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlGaAs oxide tuning layer contained in the selective oxide structure.

Resonant cavity device array for WDM application and the fabrication method of the same

Growing community of inventors

Hsinchu, Taiwan

Yi-Tsuo Wu