Winbond Electronics Corporation

Yi-Tsung Tsai

Chih-Hao Lin

Chia-Wei Wu

Yu-Chun Yang

Fang-Wei Lin

Chien-Chih Li

Hsin-Li Kuo

Provided is a memory device including a plurality of stack structures disposed on a substrate; and a dielectric layer. Each stack structure includes a first conductive layer, a second conductive layer, an inter-gate dielectric layer, a metal silicide layer, and a barrier layer. The second conductive layer is disposed on the first conductive layer. The inter-gate dielectric layer is disposed between the first and second conductive layers. The metal silicide layer is disposed on the second conductive layer. The barrier layer is disposed between the metal silicide layer and the second conductive layer. The dielectric layer laterally surrounds a lower portion of the plurality of stack structures to expose a portion of the metal silicide layer of the plurality of stack structures.

Memory device and method of forming the same

A memory device and a method for forming the same are provided. The method includes forming a plurality of gate structures on a substrate, forming a first spacer on opposite sides of the gate structures, filling a dielectric layer between adjacent first spacers, forming a metal silicide layer on the gate structures, conformally forming a spacer material layer over the metal silicide layer, the first spacer layer and the dielectric layer, and performing an etch back process on the spacer material layer to form a second spacer on opposite sides of the metal silicide layer.

Methods for forming memory devices

Memory devices

A manufacturing method of a memory structure including the following steps is provided. A memory cell structure is formed on a substrate. The memory cell structure has a first side and a second side opposite to each other. A protective layer structure covering the memory cell structure is formed. The material of the protective layer structure is nitride. The protective layer structure is a continuous structure. The height of the protective layer structure adjacent to the second side of the memory cell structure is greater than the height of the protective layer structure adjacent to the first side of the memory cell structure.

Method of manufacturing memory structure

A memory structure including a substrate, a memory cell structure, and a protective layer structure is provided. The memory cell structure is disposed on the substrate and has a first side and a second side opposite to each other. The protective layer structure covers the memory cell structure. The material of the protective layer structure is nitride. The protective layer structure is a continuous structure. The height of the protective layer structure adjacent to the second side of the memory cell structure is greater than the height of the protective layer structure adjacent to the first side of the memory cell structure.

Growing community of inventors

Taichung, Taiwan

Yi-Tsung Tsai