Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

National Yang Ming Chiao Tung University

Yi-Teh Chou

Chung-Shi Liu

Ming-Da Cheng

Chen-Shien Chen

Tin-Hao Kuo

Chih-Fan Huang

Po-Tsun Liu

Han-Ping D Shieh

Li-Feng Teng

Wei-Ting Lin

Po-Lun Chen

Jiun-Jye Chang

Chur-Shyang Fu

Ming-Chin Hung

Fu-Hai Li

Chun-Ching Hsiao

A package includes first package component, which further includes a first metal trace at a surface of the first package component, with the first metal trace having a trace width measured in a direction perpendicular to a lengthwise direction of the first metal trace. The first package component further includes a second metal trace at the surface of the first package component. The first metal trace and the second metal trace are parallel to each other. A second package component is overlying the first package component, wherein the second package component includes a metal bump. A solder region bonds the metal bump to the first metal trace, wherein the solder region contacts a top surface and sidewalls of the first portion of the first metal trace. A ratio of a volume of the solder region to the trace width is between about 1,100 &#x3bc;mand about 1,300 &#x3bc;m.

Bump-on-trace structures with high assembly yield

A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.

Semiconductor structure and fabricating method thereof

The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.

High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof

Growing community of inventors

Taipei, Taiwan

Yi-Teh Chou