Epistar Corporation

Yi-Tang Lai

Yi-Ming Chen

Chia-Liang Hsu

Shih-Chang Lee

Yao-Ning Chan

Jhih-Sian Wang

Hui-Fang Kao

Chen Ou

Yun-Chung Chou

Tzu-Chieh Hsu

Tsung-Hsien Yang

Chien-Fu Huang

Shih-I Chen

Wen-Luh Liao

Yao-Ru Chang

Yung-Fu Chang

Ye-Ming Hsu

Jhih-Jheng Yang

Chih-Wei Wei

Chun-Fu Tsai

Yen-Chun Tseng

Mei Chun Liu

Ching-Sheng Chen

Yi Hisao

Jian-Zhi Chen

The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

Semiconductor light-emitting device and semiconductor light-emitting component

Light-emitting device

A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.

Semiconductor device

A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.

Light emitting device having a light extraction layer

A light-emitting diode device includes a transparent substrate having an edge side, a peripheral region and a central region surrounded by the peripheral region; and a plurality of light-emitting diode units disposed along the peripheral region and having a first light-emitting diode unit with an edge parallel to the edge side. The central region is devoid of any light-emitting diode unit.

Light-emitting diode device

A light-emitting diode device having two electrode pads for connecting to an external power comprises a substrate; a plurality of light-emitting diode units on the substrate; and a plurality of conductive connecting structures electrically connecting the plurality of light-emitting diode units; wherein the two electrode pads are encircled by the plurality of light-emitting diode units.

A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 &#x3bc;m, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.

A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.

Semiconductor light-emitting device and method for manufacturing the same

Light-emitting diode array

Growing community of inventors

Hsinchu, Taiwan

Yi-Tang Lai