Western Digital Technologies, Inc.

Huawei Technologies Co., Limited

Yi Su

Hope Chiu

Zengyu Zhou

Rui Yuan

Paul Qu

Shixing Zhu

Kevin Du

Zhen Cheng

Vincent Jiang

Hongfeng Jiang

Alex Zhang

In a method for writing data to a solid-state drive, both a byte-level write interface and a page-level write interface are provided. Full-page input/output (I/O) data is written to a flash chip through the page-level interface, and small I/O data is written to a storage class memory (SCM) chip through the byte-level interface.

Method for writing data to solid-state drive

A memory device includes a substrate, a controller die, a flip chip die, first and second silicon dies, and bond wires. The controller and flip chip dies are attached to the substrate using connection balls and in electrical communication with each other. The first and second silicon dies include respective first and second contact pad surfaces. The bond wires electrically connect the contact pad surfaces to the substrate so the first and second silicon dies communicate with the controller die. The flip chip die and first and second silicon dies are NAND dies, the flip chip die is configured as SLC memory, and the silicon dies are configured as one of MLC memory, TLC memory, or QLC memory.

Packaged memory device with flip chip and wire bond dies

A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

Reducing keep-out-zone area for a semiconductor device

Growing community of inventors

Shanghai, China

Yi Su