Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Shun Huang

Min-Chie Jeng

Ke-Wei Su

Cheng Yuan Hsiao

Chung-Kai Lin

Ya-Chin Liang

Wai-Kit Lee

Jia-Lin Lo

Feng-Ling Hsiao

Yi-Chun Chen

Li-Chung Hsu

Ting-Sheng Huang

Juan Yi Chen

Juan-Yi Chen

Chen-Ming Tsai

A method for establishing an aging model of a device is provided. The device is measured to obtain degradation information of the device under an operating condition, wherein the device is a physical device. The degradation information is partitioned into a permanent degradation portion and an impermanent degradation portion. The impermanent degradation portion is differentiated by time to obtain a differential value. The aging model is obtained according to the differential value. When the differential value is greater than zero, a degradation of the device increases over time, and when the differential value is less than zero, the degradation of the device decreases over time.

Method for establishing aging model of device and analyzing aging state of device with aging model

A method includes receiving input information related to devices of an integrated circuit. A first simulation of the integrated circuit is performed over a first time period. Average temperature changes of the devices over the first time period are calculated. A second simulation of the integrated circuit is performed over a second time period using the average temperature changes of the devices. The first simulation and the second simulation are executed by a processor unit.

Simulation scheme including self heating effect

The present disclosure provides systems for predicting semiconductor reliability. In an embodiment a method for predicting the semiconductor reliability includes receiving a degradation parameter input of a semiconductor device and using a degradation equation to determine a plurality of bias dependent slope values for degradation over a short time period according to the degradation parameter input. The plurality of slope values include at least two different slope values for degradation over time. The system accumulates the plurality of slope values and projects the accumulated slope values over a long time period to determine a stress effect for the semiconductor device.

Circuit device reliability simulation system

A method includes determining a mapping between model parameters and electrical parameters of integrated circuits. The model parameters are configured to be used by a simulation tool. A set of electrical parameters is provided, and the mapping is used to map the set of electrical parameters to a set of model parameters.

Constructing mapping between model parameters and electrical parameters

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Hsinchu, Taiwan

Yi-Shun Huang