International Business Machines Corporation

Yi-Shiou Huang

Peter Anton Habitz

Chang-Ming Hsieh

Narasipur G Anantha

Paul J Tsang

Santosh Prasad Gaur

A process of forming a lateral PNP transistor includes the steps of: providing a chip of semiconductor material including an isolated N- device region; implanting N dopant material at a relatively low power and low dosage into a selected implant region of the device region; implanting N dopant material at a relatively higher power and higher dosage into the implant region; and forming emitter and collector regions in the device region such that an intrinsic base region is defined between the collector and emitter regions in the implant region.

Lateral PNP transistor and method for forming same

Method for forming lateral PNP transistor

A method for making a lateral PNP transistor simultaneously with an NPN transistor and the resultant device wherein a first mask defines a base-width by the resistor implant for a P-type resistor and a second mask is overlaid asymmetrically on said first mask to partially cover the collector. At the same time that the NPN extrinsic base contact is made, P-type dopants are introduced in the areas exposed by the first and second masks to provide an emitter and a collector contact for the PNP transistor.

Method of fabricating a lateral PNP transistor

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Poughkeepsie, NY, United States of America

Yi-Shiou Huang