Industrial Technology Research Institute

Accent Optical Technologies, Inc.

Yi Sha Ku

Deh Ming Shyu

Wei Te Hsu

Nigel Peter Smith

Hsiu Lan Pang

Chun Hung Ko

Shih Chun Wang

An-Shun Liu

An Shun Liu

A system for through silicon via (TSV) structure measurement comprises a reflectometer, and a computing unit. The reflectometer emits a broadband light beam to at least a TSV structure and receives a reflection spectrum of at least a TSV structure. The computing unit is coupled with the reflectometer and determines the depth of the TSV structure in accordance with the reflection spectrum.

System, method and computer readable medium for through silicon via structure measurement

A method for designing an overlay target comprises selecting a plurality of overlay target pairs having different overlay errors or offsets, calculating a deviation of the simulated diffraction spectrum for each overlay target pair, selecting a plurality of sensitive overlay target pairs by taking the deviation of the simulated diffraction spectrum into consideration, selecting an objective overlay target pair from the sensitive overlay target pairs by taking the influence of the structural parameters to the simulated diffraction spectrum into consideration, and designing the overlay target pair based on the structural parameter of the objective overlay target pair.

Method for designing overlay targets and method and system for measuring overlay error using the same

A method for designing a two-dimensional array overlay target comprises the steps of: selecting a plurality of two dimensional array overlay targets having different overlay errors; calculating a deviation of a simulated diffraction spectrum for each two-dimensional array overlay target; selecting an error-independent overlay target by taking the deviations of the simulated diffraction spectra into consideration; and designing a two dimensional array overlay target based on structural parameters of the error-independent overlay target.

Method for designing two-dimensional array overlay targets and method and system for measuring overlay errors using the same

A method for designing a two-dimensional array overlay target set comprises the steps of: selecting a plurality of two-dimensional array overlay target sets having different overlay errors; calculating a deviation of a simulated diffraction spectra for each two-dimensional array overlay target set; selecting a sensitive overlay target set by taking the deviations of the simulated diffraction spectra into consideration; and designing a two-dimensional array overlay target set based on the structural parameters of the sensitive overlay target set.

Method for designing two-dimensional array overlay target sets and method and system for measuring overlay errors using the same

A system for via structure measurement is disclosed. The system comprises a reflectometer, a simulation unit and a comparing unit. The reflectometer is configured to collect a measured diffraction spectrum of at least a via. The simulation unit is configured to provide simulated diffraction spectrums of the at least a via. The comparing unit is configured to determine at least a depth and at least a bottom profile of the at least a via by comparing the collected diffraction spectrum and the simulated diffraction spectrums.

System and method for via structure measurement

A method for designing a grating comprises steps of (a1) generating a first diffraction spectrum based on calculation values of a plurality of structural parameters, (a2) calculating a first difference value between the first diffraction spectrum and a first nominal spectrum, (a3) setting a default difference value with the first difference value and default structural parameter values with the structural parameter values, (b1) changing one of the structural parameter values to generate a second diffraction spectrum, (b2) calculating a second difference value between the second diffraction spectrum and a second nominal spectrum, and (c) comparing the default difference value and the second difference value, updating a default difference value with the smaller one, and updating the default structural parameter values with the structural parameter values corresponding to the smaller one.

Method for designing gratings

A method of measuring dimensions for an optical system to measure the critical dimension of a sample object according to this aspect of the present invention includes the steps of preparing a plurality of standard objects, selecting a predetermined focus metric algorithm, performing an analyzing process on each standard object to generate a plurality of focus metric distributions using the predetermined focus metric algorithm, analyzing the focus metric distributions to determine a target order, generating a reference relation, acquiring a measured characteristic value from the sample object, and determining the critical dimension of the sample object based on the measured characteristic value and the reference relation. Each standard object has a grating-shaped standard pattern with a predetermined pitch and line width. The focus metric algorithm is a gradient energy method, a Laplacian method, a standard deviation method, or a contrast method.

Method for measuring dimensions and optical system using the same

A method for correlating a structural parameter of a plurality of gratings acquires images from a plurality of gratings, which have different structural parameters. A focus metrics algorithm is then performed to find the off-focus offset of the orders of each grating from the intensity variation of these images, and the variation ratio of the off-focus offset to the order for each grating is calculated later. Consequently, the structural parameters of these gratings can be correlated based on the variation ratio of the off-focus offset to the order. The present method acquires images from an unknown grating at different off-focus offsets, and performs a focus metrics algorithm to find the off-focus offset of the orders of the unknown grating. The variation ratio is calculated and the structural parameter of the unknown grating is determined based on the variation ratio.

Method for correlating a structural parameter of a plurality of gratings and method for determining a structural parameter value of an unknown grating using the same

A method for correlating line width roughness of gratings first performs a step (a) generating a characteristic curve of a predetermined grating having a known line width, and a step (b) performing a comparing process to select a matching spectrum from a plurality of simulated diffraction spectrum of known line width, and setting the known line width of the matching spectrum as the virtual line width of the predetermined grating. Subsequently, the method performs a step (c) changing a measuring angle and repeating the steps (a) and (b) to generate a virtual line width curve, and calculating the deviation of the virtual line width curve. The method then performs a step (d) changing the line width roughness of the predetermined grating and repeating the steps (a), (b) and (c), and a step (e) correlating the line width roughness and the deviation of the virtual line width curve to generate a correlating curve.

Method for correlating the line width roughness of gratings and method for measurement

A method for inspecting a grating biochip comprises the steps of irradiating a grating biochip using a light beam, measuring a diffracted light using a photodetector, selecting a plurality of parameters of the grating biochip, and optimizing the parameters to enhance the detection sensitivity, wherein the diffracted light is generated by the light beam passing the grating biochip. The grating biochip comprises a grating structure including a semiconductor substrate, a grating positioned on the semiconductor substrate and a dielectric layer covering the grating and the semiconductor substrate. The sample of the biochip is positioned on the grating structure.

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Hsinchu, Taiwan

Yi Sha Ku