Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Ping Pan

Hung-Jen Hsu

Yu-Lung Yeh

Chien-Chang Huang

Li-Ming Sun

Chien Nan Tu

Chien-Nan Tu

A semiconductor device structure for sensing an incident light includes a substrate, a passivation layer and a wiring structure. The substrate has a device embedded therein. The passivation layer is disposed on the substrate, where the passivation layer has a first side and a second side opposite to the first side, the first side of the passivation layer includes microstructures disposed on the substrate, and the second side of the passivation layer is a continuous flat plane, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed on the substrate, where the writing structure includes at least one contact and metal interconnection patterns respectively formed in different dielectric layers, and the at least one contact and the metal interconnection patterns are electrically connected, where the substrate is located between the passivation layer and the wiring structure.

Semiconductor device structure and manufacturing process thereof

A semiconductor device structure for sensing an incident light includes a substrate, a wiring structure, and at least one passivation layer. The substrate has a device. The at least one passivation layer is disposed above the wiring structure. The at least one passivation layer includes a plurality of microstructures, and each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed below the at least one passivation layer. A method for manufacturing the semiconductor device structure is also provided.

A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.

Semiconductor image sensing device and manufacturing method thereof

A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.

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Taipei, Taiwan

Yi-Ping Pan