Industrial Technology Research Institute

Powerchip Semiconductor Manufacturing Corporation

E Ink Holdings Inc.

Best Champion Technology Co., Ltd.

Yi-Ping Lin

Jung-Yu Li

Shih-Pu Chen

Guan-Yu Chen

Lian-Yi Cho

Jin-Han Wu

Wei-Chih Lin

Cheng-Chang Chen

Ming-Chung Liu

Cheng-Hung Li

Po-Hung Wang

Yen-I Chou

Shih-Ping Lee

Li-Ling Lee

Ching-Sung Hsiao

Ya-Ting Chen

Yu-Ching Liao

Hsin-Ying Tung

Chun-Wei Chang

Yu-Yang Chang

Chung-Wen Wu

Pei-Lin Huang

Jau-Chyn Huang

Jane-Hway Liao

Po-Chun Chuang

Chao-Hui Yeh

Ta-Wei Chien

Jung-Ya Hsieh

Chiu-Chuan Liao

Jung Yu Li

Huei-Jhen Siao

A method of fabricating a solid-state image sensor, including steps of forming a second type doped semiconductor layer and a semiconductor material layer sequentially on a first type doped semiconductor substrate to constitute a photoelectric conversion portion, forming a multilayer structure on the semiconductor material layer, wherein a refractive index of the multilayer structure gradually decreases from a bottom layer to a top layer of the multilayer structure and is smaller than a refractive index of the semiconductor material layer, and performing a photolithography process to the multiplayer structure and the photoelectric conversion portion to form multiple micro pillars, wherein the micro pillars protrude from the semiconductor material layer and are isolated by recesses extending into the photoelectric conversion portion.

Solid-state image sensor with pillar surface microstructure and method of fabricating the same

A solid-state image sensor with pixels each including a photoelectric conversion portion made of a second type doped semiconductor layer and a semiconductor material layer, and the second type doped semiconductor layer contacts a first type doped semiconductor substrate. An anti-reflective portion is provided with multiple micro pillars on the semiconductor material layer, wherein micro pillars are isolated by recesses extending into the photoelectric conversion portion, and the refractive index of the micro pillar gradually decreases from bottom to top and is smaller than the refractive index of the light-receiving portion of the semiconductor material layer.

A manufacturing system and a method for forming a clean interface between a functional layer and a 2D layered semiconductor are provided herein. In the steps of the method, the substrate equipped with the 2D layered semiconductor is exposed to a reaction gas, and a stimulus is applied to the reaction gas to generate active particles having higher selectivity toward contaminants on the exposed surface of the 2D layered semiconductor so that the contaminants can be decomposed and removed. Additionally, the contaminants can be removed without damage to the 2D layered semiconductor. A functional layer is in-situ deposited to be in contact with the 2D layered semiconductor. Without the contaminants, a clean interface between the functional layer and the 2D layered semiconductor can be obtained and the 2D layered semiconductor can exhibit better electrical properties.

Manufacturing system and method for forming a clean interface between a functional layer and a two-dimensional layeyed semiconductor

A panoramic vision system includes a processor configured to convert received images into images in a spherical coordinate; a memory coupled to the processor and configured to store the images in the spherical coordinate; and a spherical display coupled to the processor, wherein the spherical display has a sphere center, the spherical display comprises a plurality of light-emitting-diode pixels being arranged according to the spherical coordinate, there is a same radial distance between each light-emitting-diode pixel of the plurality of light-emitting-diode pixels and the sphere center, in the plurality of light-emitting-diode pixels, there is a same azimuth spacing between adjacent two of the plurality of light-emitting-diode pixels at a zenith angle, and there is a same zenith spacing between adjacent two of the plurality of light-emitting-diode pixels at an azimuth angle.

Panoramic vision system

A light emitting device is disclosed, including a first electrode layer, a second electrode layer, and an organic light emitting layer sandwiched between the first and second electrode layers. The second electrode layer is patterned to form a plurality of electrode patterns arranged with different densities. The organic light emitting layer is subjected to a color separation process to form a plurality of monochromatic blocks that correspond to the electrode patterns, respectively. The electrode patterns are divided into a plurality of electrode pattern groups arranged in an alternate manner. The electrode pattern groups display a same image, and a same voltage is applied to the electrode pattern groups at a same time. Alternatively, the electrode pattern groups display different images, and a same or different voltages are applied to the electrode pattern groups at different times. As such, the light emitting device generates grayscale, full-color, three-dimensional or dynamic images.

Light emitting device free of TFT and chiplet

A light emitting device includes an electrode layer, a first metal layer, an organic material layer and a second metal layer stacked sequentially. The first metal layer includes a first metal portion and a second metal portion separated from the first metal portion at a first lateral distance, and the first metal portion and the second metal portion have a first period. The organic material layer includes a first emitting region separating the first metal portion and the second metal portion. The first lateral distance and the first period enable a lateral plasma coupling generated between the first metal portion and the second metal portion, such that light generated by the organic material layer at the first emitting region has a gain in a first waveband, or a peak wavelength of the light generated by the first emitting region shifts to the first waveband.

Light emitting device

A light emitting device includes a substrate layer, first and second metal layers sequentially formed on the substrate layer, and an organic material layer formed between the first and second metal layers. The first metal layer has a uniform thickness or has metal portions or further has an open portion exposing a portion of the surface of the substrate layer. The organic material layer includes a hole transport material and an electron transport material in contact with one another. An interaction between the hole transport material and the electron transport material generates exciplexes capable of emitting light having a peak wavelength in a first range, and a coupling is generated between the first and second metal layers. By adjusting the distance between the first and second metal layers or the thickness of the first metal layer, the peak wavelength of the light is shifted to a second range and/or a third range.

A light emitting element is provided, including a first electrode layer, a second electrode layer, and an organic light emitting layer sandwiched between the first electrode layer and the second electrode layer. The organic light emitting layer is patterned to include a plurality of light emitting blocks with different densities. In an embodiment, the light emitting blocks are divided into a plurality of light emitting block groups that are arranged in an alternate manner. In another embodiment, a light emitting element includes a first electrode layer, a first organic light emitting layer, a charge generating layer, a second organic light emitting layer, and a second electrode layer sequentially stacked on one another. The first and second organic light emitting layer are patterned to form a plurality of first and second light emitting blocks with different densities, respectively. Thus, the light emitting element generates full-color, gray-scale, three-dimensional, or dynamic images.

Light emitting element

A light emitting element is disclosed, including a substrate layer, a first metal layer and a second metal layer stacked sequentially on the substrate layer, and an organic material layer disposed between the first metal layer and the second metal layer. The first metal layer includes a first metal portion and a second metal portion that cover a surface of the substrate layer, and an opening portion disposed between the first metal portion and the second metal portion and exposes a portion of the surface. The organic material layer emits light having a wavelength within a first range. A first coupling generated between the first metal portion and the second metal layer shifts the light from the first range to a second range. A second coupling generated between the second metal portion and the second metal layer shifts the light from the first range to a third range.

A light emitting device includes a substrate, a coupling unit and an organic light emitting unit. The coupling unit includes a first conductive layer, a first light emitting layer and a second conductive layer. The first conductive layer is located on the substrate. The first light emitting layer is located between the first conductive layer and the second conductive layer. The organic light emitting unit is located adjacent to the second conductive layer.

A color filter includes a substrate, a first color filter pattern and a second color filter pattern. The substrate has at least one first pixel region and at least one second pixel region adjacent to the first pixel region. The first color filter pattern is disposed on the substrate and includes a first central pattern and first protruding patterns connected to the first central pattern and protruding outwardly from the first central pattern so that a portion of the first protruding patterns are located in the second pixel region. The second color filter pattern includes a second central pattern located within the second pixel region.

Color filter and display

A blue light emitting device includes an electrode layer, a first metal layer, a second metal layer formed between the electrode layer and the first metal layer, and an organic material layer formed between the first metal layer and the second metal layer and including a blue shift light emitting sub-layer. A peak of a first light-emitting spectrum of the blue shift light emitting sub-layer, which ranges within 490-550 nm, is shifted to a peak of a second light-emitting spectrum, which is less than 510 nm, by the surface plasmon coupling between the first metal layer and the second metal layer. A light emitting device is further provided, which is sequentially stacked with a first metal layer, an organic material layer having a blue shift light emitting sub-layer, a second metal layer having a metal portion and an opening portion, an electrode layer, and a light emitting layer doped with a dopant material, to emit white light.

Blue light emitting device and light emitting device

An organic light emitting diode (OLED) light source device is provided, including a lower substrate, a plurality of OLED modules disposed on the lower substrate and arranged in a matrix, a bus circuit surrounding the OLED modules to form a mesh structure and connecting the OLED modules in parallel, and an upper substrate disposed on the OLED modules and the bus circuit. The bus circuit connects the OLED modules in parallel. Therefore, the OLED light source device can be arbitrarily cut into different shapes, and its service life and light emitting performance are not affected by the cutting.

Organic light emitting diode light source device

A surface light source apparatus with dual-side emitting light includes at least a cathode wire structure, a transparent anode structure, a fluorescent layer and a low-pressure gas layer. The transparent anode structure is a surface structure, wherein the cathode wire structure and the transparent anode structure are parallel to each other. The fluorescent layer is located between the cathode wire structure and the transparent anode structure. The low-pressure gas layer fills the space between the cathode wire structure and the transparent anode structure and functions to induce the cathode evenly emitting electrons. The electron mean free path of the low-pressure gas layer allows at least a sufficient number of electrons to directly impact the fluorescent layer under an operation voltage.

Surface light source apparatus with dual-side emitting light

A cuttable organic light emitting diode (OLED) light source device is provided, including a lower substrate, a plurality of OLED modules disposed on the lower substrate and arranged in a matrix, a plurality of sensing electrodes disposed on respective OLED modules for sensing an external magnetic field in order to provide power to the OLED modules, and an upper substrate disposed on the OLED modules and the sensing electrodes. The present disclosure independently provides power to each OLED module through the sensing electrodes, and allows the cuttable OLED light source device with wireless transmission to arbitrarily cut into different shapes, so that the service life and light emitting performance are not affected by the cutting.

Growing community of inventors

Hsinchu, Taiwan

Yi-Ping Lin