Myson Technology Inc.

Mediatek Corporation

Ampson Technology. Inc

Yi-Pin Lin

Jia-Ming Chen

Ya-Ting Chang

Jia-Wei Fang

Chien-Yuan Lai

Bo-Jr Huang

Tsen Shau Yang

Cheng-Yuh Wu

Wen-Wen Hsieh

Min-Shu Wang

Ray Ku

Teng Tsai Lin

A system performs adaptive thermal ceiling control at runtime. The system includes computing circuits and a thermal management module. When detecting a runtime condition change that affects power consumption in the system, the thermal management module determines an adjustment to the thermal ceiling of a computing circuit, and increases the thermal ceiling of the computing circuit according to the adjustment.

Adaptive thermal ceiling control system

A constant-current driving method and a driving circuit for a DC motor are provided. A DC motor is often used for a DC fan. For a DC motor having two magnetic coils, the constant-current driving method is implemented by employing two control voltage signals to respectively control two semiconductor switches that are respectively connected to the two coils. One terminal of each coil is connected to a same high DC voltage, and one terminal of each semiconductor switch is connected to a same low DC voltage. The two semiconductor switches do not turn on at the same time. When each semiconductor switch is turned on, the current flowing through the coil connected to the switch eventually approaches and remains at a constant value. The constant-current driving method is especially suitable for producing low-rotation-speed and low-current DC motors.

Method and circuit for driving a DC motor

The object of present invention is to provide a programming switch for non-volatile memory wherein output voltage Vout versus input voltage Vin satisfies the following relations: (1) While Vin is logic '0', Vout is logic '0'; (2) While Vin is logic '1', Vout is about the value of programming voltage Vpp if programming is executed and about the value of supply voltage Vcc if programming is not executed. The present invention is characterized in that it can be utilized in general non-volatile memory and the supply voltage needed can be as low as 2 volts, resulting in body effect almost giving no influence.

Programming switch for non-volatile memory

The present invention provides a security configuration of EEPROM, which is adaptable to a semiconductor integrated circuit. Each byte or minimum cell of the EEPROM is assigned a security bit which corresponds to the same memory cell of EEPROM in a data memory array. Since the security bit can be established inside the memory array, necessary chip area is not increased significantly.

EEPROM circuit configuration having security function

A non-volatile memory array includes a plurality of memory cells. Each of the memory cells stores two-bits of data therein and has a threshold voltage corresponding to the data bits stored therein. A voltage providing unit provides a first test voltage to an addressed one of the memory cells. A sensing unit senses whether the addressed one of the memory cells is in a conducting state after the first test voltage has been applied thereto to determine a first bit of data stored therein. When the first bit of data stored in the addressed one of the memory cells is 0, the voltage providing unit provides a second test voltage and the sensing unit senses whether the addressed one of the memory cells is in the conducting state after the second test voltage has been applied thereto to determine a second bit of data stored therein. Otherwise, the voltage providing unit provides a third test voltage and the sensing unit senses whether the addressed one of the memory cells is in the conducting state after the third test voltage has been applied thereto to determine a second bit of data stored therein.

Non-volatile memory device and apparatus for reading a non-volatile

Growing community of inventors

Hsinchu, Taiwan

Yi-Pin Lin